SGS Thomson Microelectronics ESDA25DB3 Datasheet
ESDA25DB3
ApplicationSpecific Discretes
A.S.D.
APPLICATIONS
Where transient overvoltage protection in esd
sensitiveequipmentisrequired,such as :
-COMPUTERS
-PRINTERS
-COMMUNICATIONSYSTEMS
It is particulary recommended for RS232 I/O port
protectionwherethe lineinterfacewithstands2kV,
ESDsurges.
FEATURES
18BIDIRECTIONALTRANSILFUNCTIONS
LOWCAPACITANCE:C=30pF@V
500 W peak pulsepower(8/20µs)
DESCRIPTION
The ESDA25DB3 is a dual monolithic voltage
suppressordesignedto protect componentswhich
are connected to data and transmission lines
againstESD.
BENEFITS
HighESDprotection level: up to 25kV
Highintegration
Suitablefor high density boards
COMPLIESWITHTH EFOLLOWINGSTA NDAR DS:
IEC1000-4-2: level4
MILSTD883C-Method3015-6: class3
(humanbody model)
RM
TRANSILARRAY
FOR ESD PROTECTION
SO20
FUNCTIONAL DIAGRAM
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
I/O9
GND GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
I/O 18
I/O 17
I/O 16
I/O 15
I/O 14
I/O 13
I/O 12
I/O 11
I/O 10
January 1998 - Ed : 2
1/5
ESDA25DB3
ABSOLUTEMAXIMUMRATINGS(T
amb
=25°C)
Symbol Parameter Value Unit
V
PP
Electrostaticdischarge
25 kV
MILSTD883C- Method3015-6
P
PP
T
stg
T
j
T
L
ELECTRICALCHARACTERISTICS
Peakpulse power(8/20µs) 500 W
Storagetemperaturerange
Maximumjunction temperature
- 55 to +150
125
Maximumlead temperatureforsolderingduring 10s 260
=25°C)
(T
amb
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
Stand-offvoltage
Breakdownvoltage
Clampingvoltage
Leakagecurrent
°C
°C
°
C
I
PP
α
T Voltagetemperaturecoefficient
Peak pulsecurrent
C Capacitance
Rd Dynamicresistance
Types V
@ I
BR
R
I
RM
@V
RM
Rd αTC
min. max. max. typ. max. typ.
note1 note1 note2 note 3 0Vbias
VVmA
µ
AV
Ω
-4
10
/°CpF
ESDA25DB3 25 30 1 2 24 0.5 9.7 50
note 1 : Betwennany I/O pin Groung
note 2 : Squarepulse, Ipp = 25A, tp=2.5µs.
note 3 : ∆ V
=αT* (Tamb-25°C)* VBR(25°C)
BR
2/5
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