Datasheet ESDA25DB3 Datasheet (SGS Thomson Microelectronics)

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ESDA25DB3

ApplicationSpecific Discretes

A.S.D.

APPLICATIONS

Where transient overvoltage protection in esd
sensitiveequipmentisrequired,such as :

-COMPUTERS

-PRINTERS

-COMMUNICATIONSYSTEMS
It is particulary recommended for RS232 I/O port

protectionwherethe lineinterfacewithstands2kV,
ESDsurges.

FEATURES

18BIDIRECTIONALTRANSILFUNCTIONS
LOWCAPACITANCE:C=30pF@V

500 W peak pulsepower(8/20µs)

DESCRIPTION

The ESDA25DB3 is a dual monolithic voltage
suppressordesignedto protect componentswhich
are connected to data and transmission lines
againstESD.

BENEFITS

HighESDprotection level: up to 25kV
Highintegration
Suitablefor high density boards

COMPLIESWITHTH EFOLLOWINGSTA NDAR DS:

IEC1000-4-2: level4

MILSTD883C-Method3015-6: class3
(humanbody model)



RM

TRANSILARRAY

FOR ESD PROTECTION

SO20

FUNCTIONAL DIAGRAM

I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
I/O9
GND GND

1
2
3
4
5
6
7
8
9

10

20
19
18
17
16
15
14
13
12

11

I/O 18
I/O 17
I/O 16
I/O 15
I/O 14
I/O 13
I/O 12

I/O 11

I/O 10

January 1998 - Ed : 2

1/5

ESDA25DB3

ABSOLUTEMAXIMUMRATINGS(T

amb

=25°C)

Symbol Parameter Value Unit

V

PP

Electrostaticdischarge

25 kV

MILSTD883C- Method3015-6

P

PP

T

stg

T

j

T

L

ELECTRICALCHARACTERISTICS

Peakpulse power(8/20µs) 500 W
Storagetemperaturerange

Maximumjunction temperature

- 55 to +150
125

Maximumlead temperatureforsolderingduring 10s 260

=25°C)

(T

amb

Symbol Parameter

V

RM

V

BR

V

CL

I

RM

Stand-offvoltage
Breakdownvoltage
Clampingvoltage
Leakagecurrent

°C
°C

°

C

I

PP

α

T Voltagetemperaturecoefficient

Peak pulsecurrent

C Capacitance

Rd Dynamicresistance

Types V

@ I

BR

R

I

RM

@V

RM

Rd αTC

min. max. max. typ. max. typ.

note1 note1 note2 note 3 0Vbias

VVmA

µ

AV

Ω

-4

10

/°CpF

ESDA25DB3 25 30 1 2 24 0.5 9.7 50

note 1 : Betwennany I/O pin Groung
note 2 : Squarepulse, Ipp = 25A, tp=2.5µs.
note 3 : ∆ V

=αT* (Tamb-25°C)* VBR(25°C)

BR

2/5

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CALCULATION OF THECLAMPING VOLTAGE
USEOFTHEDYNAMIC RESISTANCE

TheESDAfamilyhasbeen designed to clamp fast
spikes like ESD. Generally the PCB designers
need to calculate easily the clampingvoltageV

CL

This is why we give the dynamic resistance in
addition to the classical parameters. The voltage
across the protection cell can be calculated with
thefollowingformula:

V

CL=VBR

+RdI

PP

WhereIppisthepeakcurrentthroughtheESDAcell.

DYNAMICRESISTANCEMEASUREMENT

Theshortdurationof theESDhas led ustoprefer
amoreadaptedtestwave,as belowdefined,to the
classical8/20µs and 10/1000µssurges.

I

Ipp

ESDA25DB3

As the value of the dynamic resistance remains
stable for a surge duration lower than 20µs, the

.

2.5µsrectangularsurgeis welladapted. Inaddition
bothrise and fall times are optimizedto avoid any
parasiticphenomenonduringthe measurementof
Rd.

2µs

tp = 2.5µs

2.5µsdurationmeasurementwave.

t

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3/5

ESDA25DB3

Fig. 1 :

Peak power dissipation versus initial

junctiontempearature.

Ppp[Tj initial]/Ppp[Tjinitial=25°C]

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0
0 25 50 75 100 125 150

Fig. 3 :

Clamping voltage versus peak pulse

Tj initial(°C)

current(Tj initial=25 °C).
Rectangularwaveformtp = 2.5µs.

Ipp(A)

50.0

10.0

tp=2.5µs

Fig. 2 :

Peak pulse power versus exponential

pulseduration(Tj initial= 25 °C).

Ppp(W)

5000

1000

tp(µs)

100

1 10 100

Fig. 4 : Capacitance versus reverse applied
voltage(typicalvalues).

C(pF)

100

F=1MHz
Vosc=30mV

50

1.0

0.1
20 25 30 35 40 45 50 55 60

V (V)CL

Fig.5 : Relativevariationof leakagecurrentversus
junctiontemperature(typical values).

I [Tj] / I [Tj=25°C]

RR

200
100

10

Tj(°C)

1

25 50 75 100 125

20

V (V)R

10

12 510 30

4/5

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ORDERCODE

ESDARRAY

ESDA25DB3

ESDA 25 D B 3 RL

PACKAGING:
RL = Tape andreel

= Tube

Package:SO20

VBRmin

MARKING : Logo,Date Code, E25DB3
PACKAGEMECHANICALDATA

SO20 Plastic

D

A

K

e

A1B

EH

L

hx45°

Bidirectionel

DIMENSIONS

REF.

Millimetres Inches

Min. Typ. Max. Min. Typ. Max.

A 2.65 0.104

C

A1 0.10 0.20 0.004 0.008

B 0.33 0.51 0.013 0.020
C 0.23 0.32 0.009 0.013
D 12.6 13.0 0.484 0.512
E 7.40 7.60 0.291 0.299
e 1.27 0.050
H 10.0 10.65 0.394 0.419
h 0.50 0.020
L 0.50 1.27 0.020 0.050
K8°(max)

Packaging :
Weight:

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No
license is grantedby implication or otherwiseunder any patent orpatent rightsof SGS-THOMSON Microelectronics.Specifications mentioned
in thispublication are subject tochange withoutnotice. This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics productsare not authorizedfor use ascriticalcomponents inlife support devices or systems without express
written approval of SGS-THOMSONMicroelectronics.

Australia - Brazil - Canada- China - France- Germany - Italy- Japan - Korea- Malaysia- Malta- Morocco

The Netherlands - Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A.

Preferredpackaging istapeandreel.

0.55g.

 1998SGS-THOMSON Microelectronics- Printed in Italy - All rights reserved.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

5/5

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