SGS Thomson Microelectronics ESDA25B1 Datasheet
ESDA25B1
ApplicationSpecific Discretes
A.S.D.
APPLICATIONS
Where transient overvoltage protection in ESD
sensitiveequipment is required,such as :
- COMPUTER
- PRINTERS
- COMMUNICATIONSYSTEMS
It is particulary recommended for RS232 I/O port
protectionwhere the line interface withstandsonly
2 kVESD surges.
FEATURES
6BIDIREC T IONALTRANSILFUNCTIONS
VERYLOWCAPACITANCE: C=20 pF @ V
150 W peak pulsepower (8/20 µs)
DESCRIPTION
TheESDA25B1is amonolithicvoltagesuppressor
designed to protect components which are
connected to data and transmission lines against
EDS.
RM
TRANSILARRAY
FOR ESD PROTECTION
SO-8
FUNCTIONAL DIAGRAM
BENEFITS
HighESD protectionlevel : upto 25kV
Highintegration
Suitablefor highdensity boards
COMPLIESWITH THE FOLLOWING STANDARDS :
IEC1000-4-2: level4
MILSTD 883C-Method 3015-6: class3
(humanbody model)
October 1999 - Ed : 2
I/O 1
I/O 2
I/O3 I/O4
1
2
3
4
8
7
6
5
I/O 6
I/O 5
GNDGND
1/5
ESDA25B1
ABSOLUTEMAXIMUM RATINGS
(T
amb
=25°C)
Symbol Parameter Value Unit
V
PP
Electrostaticdischarge
25 kV
MILSTD 883C - Method3015-6
P
PP
T
stg
T
j
T
L
ELECTRICALCHARACTERISTICS
Peakpulse power (8/20µs) 150 W
Storagetemperaturerange
Maximumjunctiontemperature
Maximumlead temperatureforsoldering during 10s
=25°C)
(T
amb
- 55 to +150
125
260 °C
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
Stand-offvoltage
Breakdownvoltage
Clampingvoltage
Leakagecurrent
°
°C
C
I
PP
α
T Voltagetemperaturecoefficient
Peak pulsecurrent
C Capacitance
Rd Dynamicresistance
Types V
@ I
BR
R
I
RM
@V
RM
Rd αTC
min. max. max. typ. max. typ.
note 1 note1 note 2 note3 0V bias
VVmAµAVΩ10
-4
/°CpF
ESDA25B1 25 30 1 2 24 1.5 9.7 15
note 1 : Between any I/O pin and Groung
note 2 : Square pulse, Ipp= 25A, tp=2.5µs.
note 3 : ∆ V
=αT*(Tamb -25°C)* VBR(25°C)
BR
2/5
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