SGS Thomson Microelectronics ESDA19SC6, ESDA17SC6 Datasheet

ESDAxxSC5
®
ESDAxxSC6
Application Specific Discretes
A.S.D.™
APPLICATIONS
- Computers
- Printers
- Communication systems
- Cellular phone handsets and accessories
- Other telephone set
- Set top boxes
FEATURES
4 Unidirectional Transil™ Functions
Low leakage current: IRmax. < 20 µAatV
500 W Peak pulse power (8/20 µs)
DESCRIPTION
The ESDAxxSC5 and ESDAxxSC6 are monolithic voltage suppressors designed to protect components which are connected to data and transmission lines against ESD.
They clamp the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transient.
BR
QUAD TRANSIL ARRAY
FOR ESD PROTECTION
SOT23-5L (SC-59)
ESDAxxSC5
FUNCTIONAL DIAGRAM
SOT23-5L
1
2
3
SOT23-6L (SC-59)
ESDAxxSC6
5
4
BENEFITS
High ESD protection level : up to 25 kV High integration Suitable for high density boards
COMPLIES WITH THE FOLLOWING STAN­DARDS:
IEC61000-4-2 : level 4
15kV (air discharge)
8kV (contact discharge)
MIL STD 883E-Method 3015-7 : class3B (human body model)
May 2002 Ed: 6F
SOT23-6L
1
2
3
6
5
4
1/9
ESDAxxSC5 / ESDAxxSC6
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Test conditions Value Unit
V
PP
ESD discharge - MIL STD 883E - Method 3015-7
25 kV IEC61000-4-2 air discharge IEC61000-4-2 contact discharge
P
PP
Peak pulse power (8/20µs) note1 ESDA5V3SCx
500 W
ESDA6V1SCx ESDA14V2SCx
300 W ESDA17SC6 ESDA19SC6 ESDA25SC6
T
j
T
stg
T
L
T
op
Junction temperature Storage temperature range Lead solder temperature (10 second duration)
Operating temperature range
ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
V V
V
I
I
αT
RM BR
CL RM PP
Stand-off voltage Breakdown voltage
Clamping voltage
Leakage current Peak pulse current Voltage temperature coefficient
amb
= 25°C)
I
I
F
V
BR
V
V
CL
RM
150 °C
-55 to +150 °C 260 °C
-40 to +125 °C
V
F
I
RM
V
2/9
C
Rd
V
Capacitance Dynamic resistance
F
Forward voltage drop
Rd
I
PP
V
@IRIRM@V
BR
ESDAxxSC5 / ESDAxxSC6
Rd αTCV
RM
@I
F
F
Types
min. max. max. typ. max. typ. max.
VVmAµAVm10
ESDA5V3SC5
5.3 5.9 1 2 3 230 5 280 1.25 200
ESDA5V3SC6 ESDA6V1SC5
6.1 7.2 1 20 5.25 350 6 190 1.25 200
ESDA6V1SC6 ESDA14V2SC5
14.2 15.8 1 5 12 650 10 100 1.25 200
ESDA14V2SC6 ESDA17SC6
ESDA19SC6 ESDA25SC6
note 1 : Square pulse, Ipp = 15A, tp=2.5µs. note 2 : VBR= αT* (Tamb -25°C) * VBR(25°C)
17 19
19 21
1
0.075
1
0.1
25 30 1 1 24 1000 10 60 1.2 10
CALCULATION OF THE CLAMPING VOLTAGE USE OF THE DYNAMIC RESISTANCE
CL
This is why we give the dynamic resistance in addition to the classical parameters. The voltage across the protection cell can be calculated with the following formula:
VCL=VBR+RdI
PP
note 1 note 2 0V bias
-4
/°C pF V mA
14 15
700 800
10
8.5
85 80
1.2
1.2
As the value of the dynamic resistance remains stable for a surge duration lower than 20µs, the
2.5µs rectangular surge is well adapted. In
.
10 10
WhereIpp is thepeakcurrent through theESDA cell.
DYNAMIC RESISTANCE MEASUREMENT
The short duration of the ESD has led us to prefer amore adapted test wave, asbelow defined, to the classical 8/20µs and 10/1000µs surges.
I
Ipp
2µs
tp = 2.5µs
s duration measurement wave.
2.5
t
3/9
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