SGS Thomson Microelectronics ESDA14V2BP6 Datasheet

®
Application Specific Discretes
A.S.D.™
MAIN APPLICATIONS
Where transient overvoltage protection in ESD sensitive equipment is required, such as :
Computers
Printers
Communication systems and cellular phones
Video equipment
Thisdeviceisparticularlyadpatedto the protection of symmetrical signals.
ESDA14V2BP6
TRANSIL™
FEATURES
4 Bidirectional Transil™ functions.
ESD Protection: IEC61000-4-2 level 4
Stand off voltage: 12V MIN
Low leakage current < 1µA
DESCRIPTION
The ESDA14V2BP6 is a monolithic array designed to protect up to 4 lines in a bidirectional way against ESD transients.
This device is ideal for applications where board space saving is required.
BENEFITS
High ESD protection level.
High integration.
Suitable for high density boards.
COMPLIESWITH THE FOLLOWING STANDARDS :
SOT-666
FUNCTIONAL DIAGRAM
1
3
GND: 2, 5
4
6
IEC61000-4-2 level 4: 15 kV (air discharge)
8kV (contact discharge)
MIL STD 883E-Method 3015-7: class 3
25kV HBM (Human Body Model)
March 2003 - Ed: 3A
1/5
ESDA14V2BP6
ABSOLUTE RATINGS (T
amb
= 25°C)
Symbol Parameter Test conditions Value Unit
V
PP
P
PP
T
j
T
stg
T
L
T
op
Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit.
ESD discharge - IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge Peak pulse power dissipation(8/20 µs). Note 1 Tjinitial = Tamb Junction temperature Storage temperature range Maximum lead temperature for soldering during 10sat 5mm for case Operating temperature range
±15
±8
50 W
125 °C
-55to+150 °C 260 °C
-40to+125 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient on printed circuit on recommended pad layout
220 °C/W
kV
ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
αT
V
F
Types IRM@V
ESDA14V2BP6
Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ V
RM
Peak pulse current Voltage tempature coefficient Forward voltage drop
RM
max. min. max. typ. typ. max.
µA V V V mA
112
0.1 3
= 25°C)
amb
V
CLVBRVRM
Slope: 1/R
V
BR
@I
R
d
Rd αTC
10
14.2 18 1 1.5 5.8 25
I
I
RM
I
PP
-4
/°C pF @ 0V
V
2/5
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