SGS Thomson Microelectronics ESDA14V2-4BF1 Datasheet
®
ESDA14V2-4BF1
QUAD BIDIRECTIONAL TRANSIL™ ARRAY
A.S.D™
APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
Computers
■
Printers
■
Communication systems and cellular phones
■
Video equipment
■
Thisdevice is particularly adaptedto the protection
of symmetrical signals.
DESCRIPTION
The ESDA14V2-4BF1 is a monolithic array
designed to protect up to 4 lines in a bidirectional
way against ESD transients.
The device is ideal for situations where board
space saving is requested.
FEATURES
■ 4 Bidirectional Transil™ functions
■
ESD Protection: IEC61000-4-2 level 4
■
Stand off voltage: 12 V MIN.
■
Low leakage current < 1 µA
■
50W Peak pulse power ( 8/20 )
FOR ESD PROTECTION
Flip Chip package
FUNCTIONAL DIAGRAM
A1
A3
C1 C3
BENEFITS
■
High ESD protection level
■
High integration
■
Suitable for high density boards
COMPLIES WITH THE FOLLOWING STANDARDS:
- IEC61000-4-2: 15 kV (air discharge)
8 kV (contact discharge)
- MIL STD 883E-Method 3015-7: class3
25kV (Human Body Model)
July 2002- Ed: 6B
GND
PIN CONFIGURATION (Ball Side)
312
A
B
C
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ESDA14V2-4BF1
ABSOLUTE RATINGS (T
amb
= 25°C)
Symbol Test conditions Value Unit
V
PP
P
PP
T
j
T
stg
T
L
T
op
Note 1: Variation of parameters will be given in the final datasheet
ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
ESD discharge - MIL STD 883E - Method 3015-7
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
Peak pulse power (8/20µs)
Junction temperature
Storage temperature range
Lead solder temperature (10 seconds duration)
Operating temperature range (note 1)
= 25°C)
amb
Stand-off voltage
Breakdown voltage
Clamping voltage
V
V
CL
Leakage current
BR
±25
±15
±8
50 W
125 °C
-55 to +150 °C
260 °C
-40 to +125 °C
I
V
RM
I
RM
kV
V
I
PP
C
Rd
Peak pulse current
Capacitance
Dynamic resistance
Type
ESDA14V2- 4BF1
Note 1: Square pulse, IPP= 3A, tp = 2.5µs
Note 2: ∆VBR = αT(Tamb-25°C) x VBR(25°C)
V
@I
BR
R
Slope = 1/Rd
IRM@V
RM
I
PP
Rd TC
min. max. max. typ. max. max
note 1 note 2 0V bias
-4
VVmAµAV Ω10
/°C pF
112
14.2 18 1
3.2 10 15
0.1 3
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ESDA14V2-4BF1
Fig. 1: Clamping voltage versus peak pulse current
(Tjinitial = 25°C) Rectangularwaveformtp = 2.5µs.
Ipp(A)
10.0
tp = 2.5µs
1.0
0.1
0 102030405060
Vcl(V)
Fig. 3: Relative variation of leakage current versus
junction temperature (typical values).
IR[Tj] / IR[Tj=25°C]
1000
100
Fig. 2: Capacitance versus reverse applied voltage
(typical values).
C(pF)
14
12
10
8
6
4
2
0
02468101214
VR(V)
F=1MHz
Vosc=30mV
Tj=25°C
RMS
10
Tj(°C)
1
25 50 75 100 125
APPLICATION EXAMPLE
A1
Connector
A3
C1
B2
C3
IC
to be
protected
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