SGS Thomson Microelectronics EMIF08-2005QEJ Datasheet
®
EMIF08-2005QEJ
IPAD.
TM
EMI FILTER INCLUDING ESD PROTECTION
APPLICATIONS:
Where EMI filtering in ESD sensitive equipment is
required :
Computers and printer
■
Communication systems
■
Mobile phones
■
DESCRIPTION
The EMIF08-2005QEJ is a highly integrated device
designed to suppress EMI/RFI noise in all systems
subjected to electromagnetic interferences. Additionally,
the EMIF08-2005QEJ filter includes an ESD protection
circuitry which prevents destruction when subjected to
ESD discharge up to 15kV.
BENEFITS
EMI symmetrical low-pass filter
■
Low PCB space consuming: 9 mm
■
■ Very thin package < 1 mm
■ High reliability offered by monolithic integration
2
COMPLIES WITHTHE FOLLOWING STANDARDS:
IEC61000-4-2:
15kV (air discharge)
8 kV (contact discharge)
MIL STD 883E - Method 3015-7 Class 3:
25kV (human body test)
16 15 14 13
1
2
3
4
QFN 3x3 mm 16 pins
PIN CONFIGURATION
Input
116
Input
215
Input
314
Input
413
12
11
10
9
5678
Low-pass Filter
Output
Low-pass Filter
Output
Low-pass Filter
Output
Low-pass Filter
Output
BASIC CELL CONFIGURATION
Low-pass Filter
Input
R = 200
Ω
C = 50pF max.
TM : IPAD is a trademark of STMicroelectronics.
December 2002 - Ed: 2A
Output
Input
Low-pass Filter
Output
512
Input
Low-pass Filter
Output
611
Input
Low-pass Filter
Output
710
Input
Low-pass Filter
Output
89
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EMIF08-2005QEJ
ABSOLUTE RATINGS (Tamb = 25°C)
Symbol Parameter and test conditions Value Unit
V
PP
T
j
T
stg
T
L
ESD discharge EC61000-4-2 air discharge
IEC61000-4-2 contact discharge
Junction temperature
Storage temperature range
Maximum lead temperature for soldering
±15
±8
125 °C
-55 + 150 °C
260 °C
kV
ELECTRICAL CHARACTERISTICS (T
Symbol
V
BR
I
RM
V
RM
V
CL
I
PP
αT
V
F
Breakdown voltage
Leakage current @ V
Stand-off voltage
Clamping voltage
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Parameter
RM
=25°C)
amb
V
V
CL
BR
V
RM
Slope = 1/R
I
I
F
V
F
I
RM
d
I
PP
Symbol Test conditions Min. Typ. Max. Unit
V
Rd
R
BR
I
RM
I/O
C
in
IR=1mA
VRM= 3V per line
= 10A, tp= 2.5µs (see note 1)
I
PP
Vbias = 0V F = 1MHz Vosc = 30mV
6 8 10 V
500 µA
1 Ω
180 200 220 Ω
45 50 pF
V
Fig. 1: Filtering behavior.
Emif08: S21(dB) response
Aplac 7.62 User: STMicroelectronics Nov 05 2002
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
100.0k 1.0M 10.0M 100.0M 1.0G
EMIF08-2005QEJ
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f/Hz
Fig. 2: Capacitance versus reverse applied voltage.
CLine(pF)
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V (V)
R
C(V)
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