SGS Thomson Microelectronics EMIF06-10006F1 Datasheet
®
IPAD
TM
MAIN PRODUCT CHARACTERISTICS
Where EMI filtering in ESD sensitive equipment is required:
Mobile phones and communication systems
■
Computers, printers and MCU Boards
■
DESCRIPTION
The EMIF06-10006F1 is a highly integrated devices
designed to suppress EMI/RFI noise in all systems
subjected to electromagnetic interferences. The
EMIF04 flip-chip packaging means the package size
is equal to the die size.
This filter includes an ESD protection circuitry which
preventsthe device fromdestruction when subjected
to ESD surges up 15kV. This device includes four
EMIF filters and 4 separated ESD diodes.
BENEFITS
■ EMI symmetrical (I/O) low-pass filter
■ High efficiency in EMI filtering
■ Verylow PCB space consuming:
2.92mm x 1.29mm
■ Very thin package: 0.65 mm
■ High efficiency in ESD suppression
(IEC61000-4-2 level 4)
■
High reliability offered by monolithic integration
■
High reducing of parasitic elements through
integration and wafer level packaging.
COMPLIES WITH THE FOLLOWING STANDARDS :
IEC 61000-4-2 level 4:
15kV (air discharge)
8 kV (contact discharge)
MIL STD 883E - Method 3015-6 Class 3
BASIC CELL CONFIGURATION
EMIF06-10006F1
6 LINES EMI FILTER
AND ESD PROTECTION
®
Flip-Chip package
PIN CONFIGURATION (ball side)
987 654 321
I6
I5
I4
Gnd Gnd Gnd
O6
O5
O4
I3
O3
I2
O2
I1
O1
A
B
C
Input 1
Input 2
Input 3
GND
TM :IPAD is a trademark of STMicroelectronics.
January 2003 - Ed: 1
Output 1
Output 2
Output 3
Filtering cells: Ri/o = 100
Input 4
Input 5
Input 6
Cline = 60pF
Output 4
Output 5
Output 6
GND
Ω
1/6
EMIF06-10006F1
ABSOLUTE RATINGS (limiting values)
Symbol Parameter and test conditions Value Unit
P
R
P
T
T
j
T
op
T
stg
DC power per resistance
Total DC power per package
Maximum junction temperature
Operating temperature range
Storage temperature range
ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
V
BR
I
RM
V
RM
V
CL
R
d
I
PP
R
I/O
Breakdown voltage
Leakage current @ V
RM
Stand-off voltage
Clamping voltage
Dynamic impedance
Peak pulse current
Series resistance between Input
and Output
amb
=25°C)
VCL
0.1 W
0.6 W
125 °C
-40 to + 85 °C
125 °C
I
I
F
VRMVBR
VF
IRM
IR
IPP
V
C
line
Input capacitance per line
Symbol Test conditions Min. Typ. Max. Unit
V
BR
I
RM
R
I/O
C
line
IR=1mA
VRM= 3.3 V per line
I=10mA
VR=2.5V,F=1MHz, 30 mV (on filter cells)
5.5 7 9 V
500 nA
80 100 120 Ω
50 60 70 pF
2/6
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