SGS Thomson Microelectronics EMIF04-MMC02F1 Datasheet

®

IPAD

TM

MAIN APPLICATION

MULTIMEDIACARD™

■

DESCRIPTION

TheEMIF04-MMC02F1 isa highly integratedarray
designed to suppress EMI / RFI noise for
MULTIMEDIACARD™ port filtering.

TheEMIF04-MMC02F1 flip-chippackaging means
the package size is equal to the die size. That's
why EMIF04-MMC02F1 is a very small device.

Additionally, this filter includes an ESD protection
circuitry which prevents the protected device from
destruction when subjected to ESD surges up to
15 kV.

EMIF04-MMC02F1

4 LINES EMI FILTER

INCLUDING ESD PROTECTION

Flip Chip package

PIN CONFIGURATION

BENEFITS

■ 4 lines low-pass-filter

■ High efficiency in EMI filtering

■

Very low PCB space consuming:< 3.3 mm

■

Very thin package: 0.65 mm

■

High efficiency in ESD suppression

2

(IEC61000-4-2 level 4)

■

High reliability offered by monolithic integration

■

High reducing of parasitic elements through
integration & wafer level packaging.

COMPLIES WITH THEFOLLOWING STANDARDS:
IEC 61000-4-2 Level 4:

15kV (air discharge)
8 kV (contact discharge)

on input & output pins.

MIL STD 883E- Method 3015-6 Class 3

A3

B3

C3

D3

A2

B2

C2

D2

B1

C1

D1

TM : IPAD is a trademark of STMicroelectronics.

September 2002 - Ed: 4A

1/6

EMIF04-MMC02F1

SCHEMATIC

A3
B3
C3

D3

ABSOLUTE MAXIMUM RATINGS (T

amb

R10

R20

R1
R2
R3
R4

D2

GND

=25°C)

C2
B2

A2

B1
C1

D1

Symbol Parameter and test conditions Value Unit

V

PP

ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge

15

8

kV

T

j

T

op

T

stg

Junction temperature

Operating temperature range

Storage temperature range

ELECTRICAL CHARACTERISTICS (T

Symbol Parameter

V

I

V

V

BR

RM

RM

CL

Rd
I

PP

Breakdown voltage
Leakage current @ V
Stand-off voltage
Clamping voltage
Dynamic impedance
Peak pulse current

RM

amb

125 °C

-40 to + 85 °C

-55 to +150 °C

=25°C)

2/6

EMIF04-MMC02F1

Symbol Test conditions Min. Typ. Max. Unit

V

BR

I

RM

C

line

R

1,R2,R3,R4

R

10

R

20

IR=1mA
VRM=3V
@0V
Tolerance ± 5%
Tolerance ± 5%
Tolerance ± 5%

P 70 mW

Fig. 1: Filtering measurements

S21(dB) measurements of C3/C1 line

0.00
dB

-5.00

-10.00

-15.00

-20.00

-25.00

-30.00

-35.00

-40.00

-45.00

-50.00

1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
f/Hz

6V

0.1 0.5 µA
20 pF

47 Ω
13 kΩ
56 kΩ

Fig. 2: Cross talk measurements

Xtalk measurements C3/B1

0.00
dB

-10.00

-20.00

-30.00

-40.00

-50.00

-60.00

-70.00

-80.00

1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
f/Hz

Note: spikes at high frequencies are induced by the PCB

layout.

Fig. 3: Line capacitance versus reverse applied
voltage.

C(pF)

20
18
16
14
12
10

8
6
4
2
0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V

(V)

R

V

F=1MHz

osc

Tj=25°C

=30mV

RMS

3/9