SGS Thomson Microelectronics EMIF04-10006F1 Datasheet
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EMIF04-10006F1
®
January 2003 - Ed: 1
IEC 61000-4-2 level 4:
15kV (air discharge)
8 kV (contact discharge)
MIL STD 883E - Method 3015-6 Class 3
COMPLIES WITHTHE FOLLOWING STANDARDS :
Flip-Chip package
®
I3
O3
D1
D2
D3
Gnd Gnd Gnd
D4
I2
O2
I4
O4
I1
O1
987 654 321
A
B
C
PIN CONFIGURATION (ball side)
■ EMI symmetrical (I/O) low-pass filter
■ High efficiency in EMI filtering
■ Very lowPCB space consuming:
2.92mm x1.29mm
■
Very thin package: 0.65 mm
■
High efficiency in ESD suppression
(IEC61000-4-2 level 4)
■
High reliability offered by monolithic integration
■
High reducing of parasitic elements through
integration and wafer level packaging.
BENEFITS
4 LINES EMI FILTER
AND ESD PROTECTION
IPAD
TM
Where EMI filtering in ESD sensitive equipment is required:
■
Mobile phones and communication systems
■
Computers, printers and MCU Boards
MAIN PRODUCT CHARACTERISTICS
The EMIF04-10006F1 is a highly integrated devices
designed to suppress EMI/RFI noise in all systems
subjected to electromagnetic interferences. The
EMIF04 flip-chip packagingmeans the package size
is equal to the die size.
This filter includes an ESD protection circuitry which
preventsthe device from destruction whensubjected
to ESD surges up 15kV. This device includes four
EMIF filters and 4 separated ESD diodes.
DESCRIPTION
TM : IPAD is a trademark of STMicroelectronics.
Input 1
Input 2
Input 3
Output 1
Output 2
Output 3
GND
Input 4
D1
D3
Output 4
D2
D 4
Filtering cells: Ri/o = 100
Cline = 60pF
Ω
BASIC CELL CONFIGURATION
EMIF04-10006F1
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Symbol Parameter and test conditions Value Unit
P
R
DC power per resistance
0.1 W
P
T
Total DC power per package
0.6 W
T
j
Maximum junction temperature
125 °C
T
op
Operating temperature range
-40 to + 85 °C
T
stg
Storage temperature range
125 °C
ABSOLUTE RATINGS (limiting values)
Symbol Parameter
V
BR
Breakdown voltage
I
RM
Leakage current @ V
RM
V
RM
Stand-off voltage
V
CL
Clamping voltage
R
d
Dynamic impedance
I
PP
Peak pulse current
R
I/O
Series resistance between Input
and Output
C
line
Input capacitance per line
ELECTRICAL CHARACTERISTICS (T
amb
=25°C)
I
V
I
F
VF
IRM
IR
IPP
VRMVBR
VCL
Symbol Test conditions Min. Typ. Max. Unit
V
BR
IR=1mA
5.5 7 9 V
I
RM
VRM= 3.3 V per line
500 nA
R
I/O
I=10mA
80 100 120 Ω
C
line
VR=2.5V,F=1MHz, 30 mV (on filter cells)
50 60 70 pF
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