SGS Thomson Microelectronics EMIF02-MIC02F1 Datasheet
®
IPAD
TM
MAIN PRODUCT CHARACTERISTICS:
Where EMI filtering in ESD sensitive equipment is
required :
Mobile phones and communication systems
■
Computers, printers and MCU Boards
■
DESCRIPTION
The EMIF02-MIC02 is a highly integrated devices
designed to suppress EMI/RFI noise in all systems
subjected to electromagnetic interferences. The EMIF02
flip chip packaging means the packagesize is equal to the
die size.
This filter includes an ESD protection circuitry which
prevents the device from destruction when subjected to
ESD surges up 15kV.
BENEFITS
EMI symmetrical (I/O) low-pass filter
■
High efficiency in EMI filtering
■
■ Very low PCB space consuming: 1.07mm x 1.57mm
■ Very thin package: 0.65 mm
■ High efficiency in ESD suppression
■ High reliability offered by monolithic integration
■
High reducing of parasitic elements through integration
& wafer level packaging.
EMIF02-MIC02F1
2 LINES EMI FILTER
AND ESD PROTECTION
Flip Chip package
PIN CONFIGURATION (ball side)
123
GND
I2
AI1
COMPLIES WITHTHEFOLLOWINGSTANDARDS:
IEC61000-4-2
Level 4 on input pins 15kV (air discharge)
8 kV (contact discharge)
Level 1 on output pins 2kV (airdischarge)
2kV (contact discharge)
MIL STD 883E - Method 3015-6 Class 3
BASIC CELL CONFIGURATION
Low-pass Filter
Input
GND GND GND
TM : IPAD is a trademark of STMicroelectronics.
September 2003 - Ed: 4A
O2
GND
Output
O1
Ri/o = 470
B
Ω
Cline = 16pF
1/6
EMIF02-MIC02F1
ABSOLUTE RATINGS (limiting values)
Symbol Parameter and test conditions Value Unit
T
j
T
op
T
stg
Maximum junction temperature
Operating temperature range
Storage temperature range
125 °C
-40 to + 85 °C
-55 to 150 °C
ELECTRICAL CHARACTERISTICS (T
Symbol
V
BR
I
RM
V
RM
V
CL
R
d
I
PP
R
I/O
C
line
Breakdown voltage
Leakage current @ V
Stand-off voltage
Clamping voltage
Dynamic impedance
Peak pulse current
Series resistance between Input & Output
Input capacitance per line
Parameter
RM
=25°C)
amb
VCL
I
I
PP
IR
IRM
VRMVBR
IRM
IR
IPP
VCL
VBRVRM
Symbol Test conditions Min. Typ. Max. Unit
V
BR
I
RM
R
I/O
C
line
IR=1mA
VRM= 12V per line
@0V
14 16 V
500 nA
423 470 517 Ω
16 pF
V
Fig. 1: S21(dB) attenuation measurement and
Aplac simulation.
- 10.00
dB
dB
- 15.00
- 20.00
- 25.00
- 30.00
- 35.00
- 40.00
- 45.00
- 50.00
1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
f/Hz
2/6
Measurement
Simulation
Fig. 2: Analog crosstalk measurements.
-20.00
dB
-30.00
-
-40.00
-
-50.00
-
-60.00
-
-70.00
-
-80.00
-
1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
f/Hz
I2/O1
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