SGS Thomson Microelectronics EMIF02-600FU7 Datasheet

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EMIF02-600FU7

Application Specific Discretes

A.S.D.

MAINAPPLICATIONS

WhereEMIfilteringin ESDsensitive equipment is required :

Computers and printers
Communication systems
Mobile phones
MCU Boards

DESCRIPTION

The EMIF02-600FU7 isa highlyintegrated array designed
to suppress EMI / RFI noise in all systems subjected to
electromagnetic interferences.

Additionally, this filter includes an ESD protectioncircuitry
whichprevents theprotected devicefrom destructionwhen
subjected to ESD surges up to 15 kV. The
EMIF02-600FU7 provides best efficiency when using
separated inputs and outputs, in the so-called 4-points
structure.

BENEFITS

10-bit EMI bi-directionallow-pass-filter
Enhanced ESD protectionfor theprotected device,op-

timized by the four pointstructure
High flexibility in the design of highdensity boards

COMPLIES WITHTHE FOLLOWINGSTANDARDS :

IEC 1000-4-2 15kV (air discharge)

8 kV (contact discharge)

TM

10-BIT WIDE EMI FILTER

INCUDING ESD PROTECTION

SSOP24

FUNCTIONAL DIAGRAM

.
.
.

10

C
E
L
L
S

.
.
.

ESDresponsetoIEC1000-4-2 (15kVairdischarge) Filteringresponse(with 50Ω line)

TM : ASDis trademark of STMicroelectronics.

September 1998 - Ed: 2A

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EMIF02-600FU7

ABSOLUTEMAXIMUM RATINGS(T

amb

=25°C)

Symbol Parameterand test conditions Value Unit

V

PP

ESDdischargeIEC1000-4-2,air discharge
ESDdischargeIEC1000-4-2,contactdischarge

T

j

T

op

T

stg

T

L

Junctiontemperature 150 °C
Operatingtemperaturerange
Storagetemperature range -55to +150 °C
Leadsolder temperature(10 secondduration) 260 °C

ELECTRICALCHARACTE RISTICS (T

amb

=25 °C)

16

9

-40 to+ 85 °C

Symbol Parameter

V

BR

I

RM

V

RM

V

CL

Breakdownvoltage
Leakagecurrent @ V
Stand-offvoltage
Clampingvoltage

RM

Rd Dynamicimpedance
I

PP

Peak pulsecurrent

kV

R

I/O

Serialresistancebetween Input
and Output

Symbol Testconditions Min. Typ. Max. Unit

V

BR

I

RM

R

I/O

R

d

Note 1 : to calculatethe ESDresidual voltage, please refer to the paragraph ”ESDPROTECTION” on pages4 & 5

IR=1mA 6 7 8 V
VRM=3V 1 µA
Serialresistancebetween Inputand Output 480 600 720 Ω
Ipp=10A,tp=2.5µs (see note1) 0.55 Ω

Fig.1: Relativevariationof leakagecurrentversus

reversevoltage(Typicalvalues)

IR[VR] / IR[VR=3V]

20.0

10.0

5.0

2.0

1.0

0.5

2.5 3.0 3.5 4.0 4.5 5.0 5.5

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VR (V)

EMIF02-600FU7

TECHNICAL INFORMATION

FREQUENCY BEHAVIOR

The EMIF02-600FU7 is firstly designed as an EMI/RFI filter. This low-pass filter is characterized by the following
parameters:

- Cut-off frequency

- Insertionloss

- High frequency rejection

FigA1: EMIF02- 600F U 7frequencyresponsecurve.

Figure A1gives these parameters, in particularthe signal rejection at theGSM frequency is about -20dBm at 900MHz,
while theattenuation for FM broadcast range(around 100MHz) is better than -32dBm

FigA2 : Measurementconditions

SPECTRUM

VoutVin

ANALYSER

50

Ω

TG OUTPUT

TEST BOARD

EMIF02

RF INPUT

Vg

50

Ω

EMIF02

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