SGS Thomson Microelectronics EMIF01-5250SC5 Datasheet
®
EMIF01-5250SC5
Application Specific Discretes
A.S.D.
MAIN APPLICATIONS
Where EMI filtering in ESD sensitive equipment is
required :
Mobile phone : handsets and ac ces sories
RF communications
DESCRIPTION
The EMIF01-5250SC5 is a highly integrated T-filter
designed to suppress EMI / RFI noise on I/O ports
of mobile phones or RF communication
equipment.
This filter includes ESD protection circuitry which
prevents device destruction when subjected to
ESD discharges.
The comprehensive layout of the
EMIF01-5250SC5 filter allows design flexibility on
high density boards.
TM
EMI FILTER
WITH ESD PROTECTION
SOT23-5L (SC-59A)
FUNCTIONAL DIAGRAM
FEATURES
T-filtering functions for 2 wires.
ESD protection of 15 kV (air discharge) per
IEC1000-4-2
Breakdown voltage : VBR = 6 V min.
Low leakage current < 1 µA.
BENEFITS
EMI / RFI noise s uppression.
Enhanced ESD protection : IEC1000-4-2 level 4
One of the smallest protection circuits available
High flexibility in the design of high density
boards
COMPLIES WITH THE FOLLOWING STANDARDS
IEC 1000-4-2
15kV (air discharge)
8 kV (contact discharge)
1
D
2
DD
3
Cz
Cz
RR
C
Cz
C
Cz
RR
4
D
5
R = 52 Ω tolerance ± 15%
C = 50 pF tolerance ± 15%
D = Zener diode
Cz = Capacitance of the zener diode
October 1998 - Ed: 5A
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EMIF01-5250SC5
ABSOLUTE MAXIMUM RATINGS
(T
= 25 °C)
amb
Symbol Parameter and test conditions Value Unit
V
PP
ESD discharge IEC1000-4-2, air discharge
ESD discharge IEC1000-4-2, contact discharge
T
j
T
op
T
stg
T
L
Junction temperature 150 °C
Operating temperature range -30 to + 85 °C
Storage temperature range -55 to +150 °C
Lead temperature for soldering during 10s
15
8
260 °C
ELECTRICAL CHARACTERI STICS of the
ZENER DIODE
(Tamb = 25 ° C)
I
Symbol Parameter
kV
V
I
BR
RM
Rd
C
trr
Z
Breakdown voltage
Leakage current
Dynamic impedance
Zener capacitance
Reverse rec over y tim e
VBRV
Rd
RM
I
RM
I
R
I
PP
V
Symbol Test conditions Min. Typ. Max. Unit
I
V
BR
IRMV
Rd I
Cz 0 V bias, V
trr I
= 1 mA
R
= 3V 1
RM
= 10 A, tp = 2.5 µs0.55
pp
= 30 mV, F = 1 MHz 90 pF
RMS
= 10 mA, dIF/dt = 20 A/µs, RL = 100 Ω, Tj = 25 °C 40 ns
F
678V
µ
A
Ω
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