SGS Thomson Microelectronics EMIF01-10018W5 Datasheet
®
EMIF01-10018W5
Application Specific Discretes
A.S.D.
MAIN APPLICATIONS
Where EMI filtering in ESD sensitive equipment is required :
Computers and printers
Communication systems
Mobile phones
MCU Boards
DESCRIPTION
The EMIF01-10018W5 is a highly integrated array
designed to suppress EMI / RFI noise in all systems
subjected to electromagnetic interfer ences.
Additionally, this filter includes an ESD protection circuitry
which prevents the protected device from de struction when
subjected to ESD surges up to 15 kV.
BENEFITS
Cost-effectiveness compared to discrete solution
EMI bi-directional low-pass filter
High efficiency in ESD suppression.
High flexibility in the design of hi gh density boards
Very low PCB space consuming : 4.2 mm2 typically
High reliability offered by monolithic integration
COMPLIES WITH THE FOLLOW ING STANDARD:
IEC 1000-4-2 15kV (air discharge)
level 4 8 kV (contact discharge)
MIL STD 883C - Methode 3015-6 Class 3
TM
EMI FILTER
INCLUDING ESD PROTECTION
SOT323-5L
FUNCTIONAL DIAGRAM
I1
GND
I2
R = 100
I/O
C = 180pF
IN
Ω
O1
O2
Filtering behavior ESD response to IEC1000-4-2 (16 kV air discharge)
dB
0
-10
Vin
-20
-30
-40
1 10 100 1,000 2,000
TM
: ASD is trademark of STMicroelectronics.
September 1999 - Ed: 1
f(MHz)
V out
1/10
EMIF01-10018W5
= 25 °C)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter and test conditions Value Unit
(T
amb
V
PP
ESD discharge IEC1000- 4-2, air dis charge
ESD discharge IEC1000- 4-2, c ontact disc harge
ESD discharge MIL STD 883 Method 3015-6
T
j
T
op
T
stg
T
L
Junction temperature 150 °C
Operating temperature range -40 to + 85 °C
Storage temperature range -55 to +150 °C
Lead solder temperature (10 seconds duration)
ELECTRICAL CHARACTERISTICS
Symbol Parameter
V
BR
I
RM
V
RM
V
CL
Breakdown voltage
Leakage current @ V
Stand-off voltage
Clamping voltage
Rd Dynamic resistance
(T
RM
amb
= 25 °C)
16
kV
9
25
260 °C
I
V
V
CL
V
RM
BR
I
RM
I
R
V
I
PP
R
I/O
Peak pulse current
Series resistance between Input
slope : 1 / R
d
I
PP
and Output
C
IN
Input capacitance per line
Symbol Test conditions Min. Typ. Max. Unit
V
I
BR
I
RM
R
I/O
R
d
C
IN
Note 1 : to calculate the ESD residual voltage, please refer to the paragraph "ESD PROTECTION" on pages 4 & 5
= 1 mA 6 7 8 V
R
V
RM
= 3V
100 nA
80 100 120
Ipp = 10 A, tp = 2.5 µs (see note 1) 1
at 0V bias 180 pF
Ω
Ω
2/10
EMIF01-10018W5
TECHNICAL INFORMA TION
FREQUENCY BEHAV IOR
The EMIF01-10018W5 is firstly designed as an EMI/RFI filter. This low-pass filter is characterized by the following
parameters:
- Cut-off frequency
- Insertion loss
- High frequency rejection
Fig A1:
EMIF01-10018W5 frequency response curve.
dB
0
-10
-20
-30
-40
1 10 100 1,000 2,000
f(MHz)
Figure A1 gives these parameters, in particula r the signal rejection at the GSM frequency i s about
-24dB @ 900MHz
-20dB @ 1800MHz
Fig. A2:
Measurement conditions
TRACKING GENERATOR
50Ω
TG OUT
Vg
SMA SMA
TEST BOARD
IF01
M
E
SPECTRUM ANALYSER
RF IN
50Ω
3/10
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