SGS Thomson Microelectronics EF9345 Datasheet

HMOS2 SINGLE CHIP SEMI-GRAPHIC
.
.
TV STANDARDCOMPATIBLE (50Hz or 60Hz)
.
2 SCREENFORMATS :
- 25 (or 21) ROWS OF 40CHARACTERS
- 25 (or 21) ROWS OF 80CHARACTERS
.
ON-CHIP 128 ALPHANUMERIC AND 128 SEMI-GRAPHIC CHARACTER GENERATOR TWO STANDARD OPTIONS AVAILABLEFOR ALPHANUMERIC SETS (EF9345-R003IS NO MOREAVAILABLE)
.
EASY EXTENSION OF USER DEFINED AL­PHANUMERIC OR SEMI-GRAPHICSETS (> 1 K CHARACTERS)
.
40CHARACTERS/ROWATTRIBUTES : FORE­GROUNDANDBACKGROUNDCOLOR,DOU­BLE HEIGHT, DOUBLE WIDTH, BLINKING, REVERSE, UNDERLINING, CONCEAL, IN­SERT, ACCENTUATION OF LOWER CASE CHARACTERS
.
80 CHARACTERS/ROW ATTRIBUTES : UN­DERLINING, BLINKING, REVERSE, COLOR SELECT
.
PROGRAMMABLE ROLL-UP, ROLL-DOWN ANDCURSOR DISPLAY
.
ON-CHIPR, G, B, I VIDEOSHIFTREGISTERS
.
EASY SYNCHRONIZATION WITH EXTER­NAL VIDEO-SOURCE : ON-CHIP PHASE COMPARATOR
.
ADDRESS/DATA MULTIPLEXED BUS DI­RECTLYCOMPATIBLE WITH STANDARD MI­CROCOMPUTERS SUCH AS 6801, 6301, 8048,8051, ST9
.
ADDRESSING SPACE : 16K x 8 OF GEN­ERALPURPOSE PRIVATEMEMORY
.
EASY OF USE OF ANY LOW-COST MEM­ORYCOMPONENTS: ROM, SRAM,DRAM
DESCRIPTION
The EF9345,new advancedcolor CRT controller, in conjunctionwith an additional standardmemory packageallowfull implementation of the complete displaycontrolunit of a color or monochromelow­cost termainl, thus significantly reducing IC cost and PCB space.
DISPLAY PROCESSOR
(Plastic Package)
ORDER CODE : EF9345P
PIN CONNECTIONS
V
ASM
HVS/HS
PC/VS
CLK
SYNC IN
R/W AD0 AD1 AD2
V
OE
WE
HP
AS
DS
1
SS
2 3 4 5 6
B
7
G
8
R
9
I
10 11 12 13 14 15 16 17 18 19 20
CC
DIP40
EF9345
40
ADM0
39
ADM1
38
ADM2
37
ADM3
36
ADM4
35
ADM5
34
ADM6
33
ADM7
32
AM8
31
AM9
30
AM10
29
AM11
28
AM12
27
AM13
26
CS
25
AD7
24
AD6
23
AD5
22
AD4
21
AD3
9345-01.EPS
March 1995
1/38
EF9345
PIN DESCRIPTION(All the input/outputpins are TTLcompatible)
Name
MICROPROCESSORINTERFACE
AD(0:7) I/O
AS I 14
DS I 15 Data Strobe
R/W I 16 Read/Write
CS I 26 Chip Select The EF9345 is selected when this inputis strobed low by AS.
MEMORY INTERFACE
ADM(0:7) I/O 40-43
AM(8:13) O 32-27
OE O 2 Output Enable When low, this output selects the memory data output buffers.
WE O 3 Write Enable
ASM O 4
OTHER PINS
CLK I 12 Clock Input External TTL clock Input (nominal value : 12MHz, duty cycle : 50%).
V
SS
V
CC
VIDEO INTERFACE
R G B
I O 10 Insert
HVS/HS O 5 Sync. Out
PC/VS O 6
SYNC IN I 13 Synchro In
HP O 11 Video Clock This output delivers a 4MHz clock phased with theR, G, B, I signals.
Pin
Type
Pin N° Function Description
17-29 21-25
Multiplexed
Address/Data
Bus
Address
Strobe
These 8 bidirectional pins provide communication with the microprocessor system bus.
The falling edge of this control signal latches the address on the AD(0:7) lines,the state of the Data Strobe (DS) and Chip Select (CS) into the chip.
When this input is strobed high by AS, the output buffers are selected while DS is low fora read cycle (R/W = 1). In write cycle, data present on AD(0:7) lines are strobed by R/W low (see timing diagram 2). When this input is strobed low by AS, R/W gives the direction of data transfer on AD(0:7) bus. DS high strobes the data to be written during a write cycle (R/W = 0) orenables the output buffers during a read cycle (R/W = 1). (see timing diagram 1).
This input determines whether the Internal registers get written or read. A write is active low (”O”).
Multiplexed
Address/Data
Lower 8 bits of memory address appear on the bus when ASM is high. It then becomes the data bus when ASMis low.
Bus
Memory
These 6 pins provide the highorder bits of the memory address.
Address Bus
This output determines whether the memory gets read or written. A write is activelow (”0”).
Memory Address
This signal cycles continuously. Address can be latched on its falling edge.
Strobe
S 1 Power Supply Ground. S 20 Power Supply +5V
O O O
7 8 9
Red
Green
Blue
These outputs deliver the videosignal. They are low during the vertical and horizontal blanking intervals.
This active high output allows to insert R : G: B : in an external video signal forcaptioning purposes, for example. It can also be used as a general purpose attribute or color.
This output delivers either the composite synchro (bit TGS horizontal synchro signal (bit TGS
Phase
Comparator /
When TGS When TGS
Vertical Sync
This input allows vertical and/or horizontal synchronizing the EF9345 on an externalsignal. Itmust be grounded if not used.
=0)
4
= 1, this signal is the phase comparator output.
4
= 0, this output delivers the vertical synchro signal.
4
4
= 1) or the
9345-01.TBL
2/38
BLOCK DIAGRAM
EF9345
AD(0:7)
AS
STA CMD
8
14 15DS 16R/W 16CS
MPU ACCESS
8
R3R4
R3R6
R3ROR
TRANSCODER
ADDRESS UNIT
R1 R2 R3
R3R5
R3R7
R3DOR
8
DATA BUS
ROW BUFFER 120 x 8
ROM
R3TSG
R3RFSH
ATTRIBUTE
LOGIC
MAT
PAT
TIMING
GENERATOR
+5V
R
9
G
8
B
7
I
10
11
HP HVS/HS
5
5
PC/VS
6
6
13
SYNC.IN
AM(8:13)
R3
3
2
4
6
ADM(0:7)
8
WE
OE
ASM
CLK
EF9345
12
9345-02.EPS
3/38
EF9345
ABSOLUTEMAXIMUM RATINGS
Symbol Parameter Value Unit
* Supply Voltage -0.3, 7.0 V
V
CC
* Input Voltage -0.3, 7.0 V
V
in
T
A
T
stg
P
Dm
* With respect to Vss. Stresses above those hereby listed may cause permanent damage tothe device. The ratings are stress ones only and functional operation of the device atthese or any conditionsbeyond thoseindicatedinthe operational sectionsof this specificationis notimplied. Exposure tomaximum rating conditionsfor extendedperiods may affect reliability. StandardMOS circuits handlingprocedure should be used toavoid possibledamage to the device.
Operating Temperature 0, +70 Storage Temperature -55, +150 Maximum Power Dissipation 0.75 W
ELECTRICAL CHARACTERISTICS
=5.0V ±5%, VSS=0V,TA= 0 to +70°C,unless otherwisespecified.
V
CC
Symbol Parameter Min. Typ. Max. Unit
V
CC
V
IL
V
IH
I
IN
V
OH
V
OL
P
D
C
IN
I
TSI
Supply Voltage 4.75 5 5.25 V Input Low Voltage -0.3 0.8 V Input HighVoltage : CLK
Other Inputs
2.2 2
V
CC
V
CC
Input Leakage Current 10 µ Output HighVoltage (I Output Low Voltage : I
= -500µA)
load
= 4mA ; AD(0:7), ADM(0:7), AM(8:13)
load
= 1mA ; Other Outputs
I
load
2.4 V
0.4
0.4
Power Dissipation 250 mW Input Capacitance 15 pF Three State (Off State) Input Current 10 µ
o
C
o
C
V
A
V
A
9345-02.TBL
9345-03.TBL
4/38
EF9345
MEMORYINTERFACE
=5.0V ±5%, TA=0 to + 70°C
V
CC
Clock : f ReferenceLevels: V
Symbol Ident. N° Parameter Min. Typ. Max. Unit
t
ELEL
t
EHEL
t
ELDV
t
t
AVEL
t
ELAX
t
CLAZ
t
GHDX
t
t
GLDV
t
QVWL
t
WHQX
t
WLWH
= 12MHz ; DutyCycle 40 to 60% ; tr,tf< 5ns
in
= 0.8Vand VIH=2V,VOL= 0.4V and VOH=2.4V
IL
1 Memory Cycle Time 500 ns
t
D
2 Output Delay Time from CLK Rising Edge (ASM, OE, WE) 60 ns 3 ASM High Pule Width 120 ns 4 Memory Access Time from ASM Low 290 ns
DA
5 Output Delay Time from CLK Rising Edge (ADM(0:7), AM(8:13)) 80 ns 6 Address Setup Time to ASM 30 ns 7 Address Hold Time from ASM 55 ns 8 Address Off Time 80 ns 9 Memory Hold Time 10 ns
OZ
10 Data Off Time from OE 60 ns 11 Memory OE Access Time 150 ns 12 Data Setup Time (Write Cycle) 30 ns 13 Data Hold Time (WriteCycle) 30 ns 14 WE Pulse Width 110 ns
9345-04.TBL
Figure 1 : TestLoad Table 1
V
DD
Symbol
C 100pF 50pF
R
Test
Point
R
L
C
L
R
MMD7000 or equivalent
R
9345-03.EPS
Figure 2 : Memory Interface Timing Diagram
1
2
D
2
11
3
56 7
IN
9
10
CLK
ASM
ADM (0:7)
AM (8:14)
OE
WE
T
2
56 7
READ ADDRESS WRITE ADDRESS
4
8
2
AM(8:13) ADM(0:7)
AD(0:7)
L
1k 3.3k
4.7k 4.7k
5
D
OUT
22
12 13
14
Other
Outputs
9345-05.TBL
9345-04.EPS
5/38
EF9345
MICROPROCESSORINTERFACE
EF9345 is motel compatible. It automaticallyse­lects the processortype by using AS input latch to state of the DS input.
No external logic is needed to adapt bus control signals frommost of the common multiplexed bus microprocessors.
MICROPROCESSORINTERFACE TIMING AD(0:7), AS, DS, R/W, CS
V
= 5.0V ±5%,TA= 0 to + 70°C, CL=100pF on AD(0:7)
CC
ReferenceLevels : V
Symbol Ident. N° Parameter Min. Typ. Max. Unit
t
CYC
t
ASD
t
ASED
t
PWEH
t
PWASH
t
RWS
t
RWH
t
ASL
t
AHL
t
DSW
t
DHW
t
DDR
t
DHR
t
ACC
1 Memory Cycle Time 400 ns 2
3 4 Write Pulse Width 200 ns
5 AS Pulse Width 100 ns 6 R/W to DS Setup Time (Timing 1) 100 ns 7 R/W to DS Hold Time (Timing 1) 10 ns 8 Address and CS Setup Time 20 ns
9 Address and CS Hold Time 20 ns 10 Data Setup Time (Write Cycle) 100 ns 11 Data Hold Time (Write Cycle) 10 ns 12 Data Access Time from DS (Read Cycle) 150 ns 13 DS Inactive to High Impedance State Time (Read Cycle) 10 80 ns 14 Address to Data Valid Access Time 300 ns
=0.8V and VIH=2V on All Inputs ; VOL= 0.4V andVOHonall Outputs.
IL
DS Low to AS High (Timing 1) DS High or R/W High to AS High (Timing 2)
AS Low to High (Timing 1) AS Low to DS Low or R/W Low (Timing 2)
EF9345 6801 INTEL Family
Timing 1 Timing 2
AS AS ALE
DS
DS, E, φ 2
RD
R/W R/W WR
30 ns
30 ns
9345-06.TBL
Figure 3 : MicroprocessorInterfaceTiming Diagram1 (6801 Type)
1
3
2
5
6
8
ADDRESS
8
ADDRESS
9
9
12
14
6/38
DS
ASM
R/W
CS
WRITECYCLE AD (0:7)
READ CYCLE AD (0:7)
10
INPUT DATA
OUTPUT
DATA
2
7
11
13
9345-05.EPS
Figure 4 : MicroprocessorInterfaceTiming Diagram2 (INTEL Type) - ReadCycle
1
EF9345
ALE
(Pin AS)
23
5
RD
(Pin DS)
WR
(Pin R/W)
2
12
CS
AD(0:7)
8
9
ADDRESS
14
13
D
OUT
Figure 5 : MicroprocessorInterfaceTiming Diagram2 (INTEL Type) - Write Cycle
1
ALE (Pin AS)
RD (Pin DS)
2
2
5
3
4
9345-06.EPS
WR (Pin R/W)
CS
AD(0:7)
89
ADDRESS
10
11
D
IN
9345-07.EPS
7/38
EF9345
VIDEO INTERFACE R, G, B, I, HP, HVS/HS, PC/VS
V
= 5.0V ±5%,TA= 0 to + 70°C, CLK Duty Cycle = 50%, CL=50pF
CC
ReferenceLevels : V
Symbol Parameter Min. Typ. Max. Unit
t
t
HO
t
t
PWCH
t
PWCL
Setup Time R, G, B, I to HP 10 ns
SU
Hold Time R, G, B, I fromHP 50 ns Output Delay from CLK Edge 60 ns
D
CLK High Pulse Width 30 ns CLK Low Pulse Width 30 ns
Figure6
CLK
=0.8V and VIH=2.2V on CLK Inputs.VOL=0.4V and VOH= 2.4V on all Outputs.
IL
9345-07.TBL
R, G, B, I, 40 char/row
HP
R, G, B, I, 80 char/row
HVS/HS PC/VS
INPUT CLK
CLK
t
D
t
HO
t
SU
t
D
t
D
t
PWCH
t
PWCL
t
D
t
D
t
D
8/38
9345-08.EPS
Figure 7 : Vertical and Horizontal SynchronizationOutputs (CLK = 12MHz)
Blanking 3 Lines
2.04µs
4.5µs4.5µs Margin
18 Lines
EF9345
Bulk
40µs6µs2µs
40µs6µs6µs
=0)
=1)
0
312 lines (TGS
0
362 lines (TGS
64µs
6µs40 char/row
Margin Margin H BlankingH Blanking
32µs
Odd frame 1/2 pulse Even frame 1/2 pulse
10µs
9.96µs
=0)
0
312.5 lines (TGS
=1)
0
362.5 lines (TGS
80 char/row
Blanking 25 Lines Margin 16 Lines Page 250 Lines
2 lines
2.5 lines
=0)
4
HVS
OHVOL
V
=0
= 1 25 Lines 10 Lines 210 Lines 14 Lines 3Lines
0
R, G, B, I
=1)
0
4
TGS
TGS
=0)
4
=1)
4
HORIZONTAL SYNCHRO
VERTICAL SYNCHRO
NON INTERLACED
HVS (TGS
VS (TGS
INTERLACED
Even Frame
HVS (TGS
Odd Frame
Even Frame
VS (TGS
Odd Frame
9345-09.EPS
9/38
EF9345
FUNCTIONAL DESCRIPTION
The EF9345is a low cost, semigraphic,CRT con­troller. It is optimizedfor use witha lowcost, monochrome or color TV type CRT (64ms per line, 50 or 60Hz refresh frequency).
The EF9345 displays up to 25 rows of 40 charac­ters or 25 rows of 80 characters.
The on-chip character generator provides a 128 standard, 5 x 7, character set and standard semi­graphic sets.
More usedefinable(8 x 10) alphanumericor semi­graphicsets may bemappedin the16K x8 private memory addressingspace.
These user definable sets are available only in 40 charactersper row format.
MicroprocessorInterface
The EF9345 provides an 8-bit, adress/data multi­plexed microprocessorinterface.
It is directly compatible with popular (6801, 8048, 8051, 8035,...) microprocessors.
40 Charactersper Row : Character Code Formatsand Attributes
Once the 40 characters per row format has been selected, one character code format out of three must be chosen :
- 24-bit fixed format : All the attributesare providedin parallel.
- 8/24-bit compressedformat : All the attributesare latched.
- 16-bit fixed format : Some parallel attributes,other are latched.
Characterattributesprovided :
- Backgroundand foregroundcolor (3 bits each),
- Doubleheight, double width,
- Blinking,
- Reverse,
- Underlining,
- Conceal,
- Insert,
- Accentuationof lower casecharacters,
- 3 x 100 user definable character generator in memory,
- 8 x 100semi-graphicquadrichromecharacters.
Registers
The microprocessordirectly accesses8 registers:
- R0 : Command/status register.
- R1, R2, R3 : Data registers.
- R4, R5, R6, R7 : Each of these register pairs pointsinto the private memory.
Through these registers, the microprocessorindi­rectly accesses the private memory and 5 more registers :
- ROR, DOR : Base address of displayed page memoryand usedexternalcharactergenerators.
- PAT, MAT, TGS : Usedto select the page attrib­utes and format, and to program thetiming gen­eratoroption.
Private Memory
The usermay partitionthe 16Kx 8 private memory addressingspace between :
- Page ofcharacter codes(2 K x 8 or 3 K x 8),
- Externalcharacter generators,
- Generalpurposeuser area.
Many types of memory componentsare suitable :
- ROM, DRAMor SRAM,
- 2 K x 8, 8 K x 8, 16 K x 4 organizations,
- Modest 500ns cycletime and 250nsaccess time is required.
80 Charactersper Row Format : Character Code Format and Attributes
Two character code formats are provided :
- Long (12 bits)with 4 parallel attributes:
Blinking,
Underlining,
Reverse,
Color select.
- Short (8 bits) : no attributes.
Timing Generator
The whole timing is derived from a 12MHz main clock input.
The RGB outputs are shifted at 8MHz for the 40 character/row format and at 12MHz for the 80 character/row.
Besides,the user mayselect :
- 50Hz or 60Hzvertical sync. frequency,
- Interlacedor not,
- Separated or composite vertical and horizontal sync.ouputs.
Furthermore,a compositesync.inputallows,when it is required :
- An on-chip vertical resynchronization,
- An on-chip crude horizontalresynchronization,
- An off-chip high performance horizontal resyn­chronization by use of a simple external VCXO controlledby theon-chip phase comparator.
10/38
MEMORYORGANIZATION Logical And PhysicalAddressing
The physical16-Kbyteaddressingspaceis logicaly partitioned by EF9345 into 40-byte buffers (Fig­ure 8). Moreprecisely,a logicaladdressisgiven by an X, Y,Z triplet where :
- X = (0 to 39) points to a byte inside a buffer,
- Y = (0, 1 ; 8 to 31) points to a buffer inside a 1 Kbyte blocks,
- Z = (0 to 15) points to a block.
Obviously, 1 K = 2
10
= 1024 cannot be exactly divided by 40. Consequently, any block holds 25 full buffersand a24-byte remainder.Provided that the physicalmemory is a multiple of 2 Kbytes, the remainders are paired in sucha way as to make available:
- A full buffer (Y = 1) in each evenblock,
- A partial buffer (Y = 1 ; X = 32 to 39)in each odd
block.
Figure 8 : Memory Row Buffer
EF9345
Pointers
EachX, Y and Z componentof alogical address is binaryencodedand packed in two 8-bitsregisters.
Sucha registerpair is a pointer (Figure9). EF9345 containstwo pointers :
- R4, R5 : auxiliary pointer,
- R6, R7 : main pointer. R5 and R7 have the same format. Each one holds
an X componentand the two LSB’sof a Z compo­nent. This packing induces a partitioning of Z in 4 districts of 4 blockseach.
R5, R7 points to a block number in a district. R4 and R6 have a slightlydifferent format : Each one holds a Y component and the LSB of the district number. But R6 holds bothdistrictMSB
Figure 11 gives the logical to physical address transcodingscheme performed onchip.
Figure9 : PointerAuto Incrementation
X
839
32 32
DISTRICT
0 1
8
31
00 1 8
Y
31
0 1 8
31
0 1 8
31
0 9
DISTRICT
DISTRICT
120-BYTE ROW BUFFER 80-BYTE ROW BUFFER
- Row buffers lay indide a district
Notes :
- At two or threesuccessiveblock addresses (modulo 4)
- First block address is even
BLOCK0
(1Kbyte)
BLOCK1
BLOCK2
BLOCK3
839
X
Y
39 1
9345-10.EPS
Y = (0, 1 ; 8 to 31)
d1d1d043210R6
X=0to39
b0b1543210R7
Y’ = (0, 1 ; 8 to 31)
__
b0b1543210R5
X incrementation
d043210R4
X’ = 0 to 39
0
2=0 4=0 6=0
0
XYB
Modulo40
89
31
2
Y incrementation
1 3=1 5=1 7=1
Modulo24
MAIN POINTER
AUXILIARY POINTER
Z = (0 to 15)
3210
DB
1
10
0
3
Z incrementation/
decrementation
Modulo4 on the
blocknumber only
2
9345-11.EPS
11/38
EF9345
Data Structure in Memory
A page is a data structure displayable on the screen up to 25 rows of characters. According to the charactercode format, eachrow on the screen is associatedwith 2 (or 3)40-bytebuffers. This set of 2 (or 3) buffers constitutes a row buffer (Fig­ure 8). Thebuffers belongingto arow buffer must meet the followingrequirements :
- They have the same Y address,
- They have the same district number,
- They lie at 2 (or 3) successive (modulo 4) block
addressesin their common district.
Consequently, a row buffer is defined by its first buffer address andits format.
A pageis a set of successiverow buffers :
- With thesame format,
- With thesame districtnumber,
- With the same block address of first buffer. This
blockaddress must be even,
- Lyingat successive(modulo 24) Y addresses. Figure 10 : MemoryCycle Allocation
40µs24µs
Consequently, a page should not cross a district boundary.General purpose memory area may be used but should respect the buffer of row buffer structure. See Figure 9 for pointer incrementation implied by these data structures.
MemoryTime Sharing (See Figure10) Thememoryinterfaceprovidesa 500ns cycletime.
Thatis to say a 2 Mbyte/smemory bandwith. This bandwithis shared between :
- Reading a row buffer from memory to load the internalrowbuffer(upto120bytesonceeachrow),
- Readinguser definedcharactersslicesfrom me­mory (1 byte each µs),
- Indirectmicroprocessor read or write operation,
- Refreshcycles to allowDRAM use, withno over­head.
A fixed allocation schemeimplements the sharing. During these lines, no microprocessor access is
provided for 104µs ; this hold too when no user definedcharacter slices are addressed.
312/362
250/210
SCAN
ACTIVE
LINES
SCAN
LINES
INACTIVE LINE LAST ROW LINE FIRST ROW LINE OTHER ROW LINE
Notes : 1. Dummy cycles are read cycles at dummyaddresses.
2. RFSH cycles are read cycles performed by an 8-bit auto-incrementing counter. Low order address byte ADM(0:7) cycles through its 256 statesin less than 1ms.
3.
The microprocessor may indirectly access the memory once every µs, except during the first and the last line of a row, when the internalbuffer must be reloaded.
ACTIVE
DISPLAY
TIME
DUM
µP
UDS
LD
UDS
LD
UDS
µP
1µs
40µs24µs
RFSH
LD RFSH RFSH
µP LD
µP µP
1µs
ONE ROW = 10 SCAN LINES
MEMORY CYCLE
DUM : dummy cycle µP : indirect access to memory RFSH : refresh cycle UDS :slice read cycle LD : read cycle to load the internal row buffer
Figure 11 : Logicalto PhysicalAddress TranscodingPerformed On-chip
Z (0 to 15) Y (0, 1 ; 8 to 31) X (0 to 39)
DB
LOGICAL ADDRESS
3210 43210 43210
TRANSCODING
5
9345-12.EPS
12/38
PHYSICAL ADDRESS
131211 109876543 210
9345-13.EPS
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