SGS Thomson Microelectronics DTV32G-1500B Datasheet
MAINPRODUCTSCHARACTERISTICS
DTV32G-1500B
(CRT HORIZONTALDEFLECTION)
HIGH VOLTAGE DAMPER DIODE
I
F(AV)
V
RRM
V
(max)
F
6A
1500 V
1.5 V
FEATURESAND BENEFITS
HIGHBREAKDOWNVOLTAGECAPABILITY
HIGHFREQUENCY OPERATION
SPECIFIED TURN ON SWITCHING
CHARACTERISTICS
TYPICALTOTAL LOSSES:3.5 W
(I
= 6 A, F = 56 kHz)
Fpeak
SUITABLEWITHBUH TRANSISTORSSERIES
SMD PACKAGE
DESCRIPTION
High voltage diode especially designed for
horizontal deflection stage in standard and high
resolutiondisplaysfor TV’s andmonitors.
Thisdevice is packagedin D
2
PAK.
K
K
A
A
NC
D2PAK
ABSOLUTE MAXIMUMRATINGS
Symbol Parameter Value Unit
I
F(RMS)
V
RRM
V
RWM
I
F(AV)
I
FSM
RMSforward current 15 A
RepetitivePeak ReverseVoltage 1500 V
ReverseWorking Voltage 1350 V
Averageforward currentδ= 0.5 Tc=130°C6 A
SurgeNon RepetitiveForwardCurrent tp = 10ms
100 A
sinusoidal
T
stg
T
j
November 1997 - Ed: 2
StorageTemperature - 40 to 150 °C
MaximumOperatingJunctionTtemperature 150
1/6
DTV32G-1500B
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th(j-c)
Junctionto Case 2 °C/W
STATICELECTRICAL CHARACTERISTICS
Symbol TestConditions Min Typ Max Unit
I
R*
VR=V
RWM
Tj= 25°C 200
Tj= 100°C1mA
V
F**
IF=6A Tj= 25°C 1.5 V
Tj= 100°C 1.4
pulse test : * tp = 5 ms ,δ<2%
** tp = 380 µs, δ <2%
RECOVERYCHARACTERISTICS
Symbol TestConditions Min Typ Max Unit
t
(1) Tj = 25°CI
rr
t
rr
Tj = 25°CIF=1AI
=1 A dIF/dt = -50A/µsVR=30V 175 ns
F
=1 A dIF/dt = -15A/µsVR=30V 250
I
F
=100mA 140 ns
R
A
µ
TURN-ON SWITCHINGCHARACTERISTICS
Symbol Test Conditions Min Typ Max Unit
tfr(2) Tj = 100°CI
(2) 39 V
V
Fp
=6A dIF/dt= 80 A/µs
F
=2V
V
FR
0.6
(1)Test followingJEDEC standard
(2)Test representativeof the application
Toevaluate themaximum conductionlosses use the following equation:
V
= 1.2+ 0.034 I
F
F
P= 1.2 x IF(av)+ 0.034x I
F2(RMS)
s
µ
2/6
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