SGS Thomson Microelectronics DB-960-90W Datasheet
DB-960-90W
90W / 26V / 925-960 MHz PA using 2x PD57060S
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 90 W min. with 13 dB gain over
OUT
925-960 MHz
• 10:1 LOAD VSWR CAPABILITY
• BeO FREE AMPLIFI E R.
DESCRIPTION
The DB-960-90W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed for GSM/GPRS/EDGE base
station applications.
The DB-960-90W is desig ned in coope ration with
Europeenne de Telecomunications S.A. (www.etsa.rf), for high gain and broadband performance
operating in common source mode at 26 V, capable of withstanding l oad mismatch up to 10:1 all
phases and with harmonics lower than 30 dBc.
The
LdmosST
PRELIMINARY DATA
ORDER CODE
DB-960-90W
FAMILY
MECHANICAL SPECIFICATION
L=80 mm W=50 mm H=10 mm
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
DD
I
D
P
DISS
T
CASE
P
amb
November, 20 2002
Supply voltage 32 V
Drain Current 12
Power Diss. at Tcase = +85°C 145 W
Operating Case Temperature -20 to +85
Max. Ambient Temperature +55
CASE
= 25oC)
A
o
C
o
C
1/5
DB-960-90W
ELECTRICAL SPECIFICATION (T
= +25oC, Vdd = 26V, Idq = 2 x 200 mA)
amb
Symbol Test Conditions Min. Typ. Max. Unit
FREQ. Frequency Range 925 960 MHz
P
Gain
P
1dB
Flatness
Flatness
ND at P
IRTL
Harmonic
VSWR
Spurious
IMD
1dB
3
OUT
= 90 W
12 13 dB
Over frequency range: 925 - 960 MHz 90 100 W
Over frequency range and @ P
P
from 0.1W to 90 W
OUT
P
1dB
Input return Loss P
P
= 90 W
OUT
from 0.1W to 90 W
OUT
Load Mismatch all phases @ P
10:1 VSWR all phases and P
P
= 90 WPEP
OUT
= 90 W
OUT
= 90 W
OUT
from 0.1 to 90 W
OUT
+/- 0.5 dB
1dB
40 45 %
-20 -15 dB
-30 dBc
10:1
-76 dBc
-25 dBc
TYPICAL PERFORMANCE
Output Power vs. Input Power
Pout (W)
120
100
80
60
40
940 MHz
960 MHz
925 MHz
Power Gain vs. Frequency (Pout = 90W)
Gp (dB)
15
14
13
12
20
0
02468
Pin (W)
Vdd = 26 V
Idq = 2 x 200 mA
Output Power and Efficiency vs. Frequency
P1dB (W)
120
F (MHz)
P1dB
Eff.
Vdd = 26 V
Idq = 2 x 200 mA
100
80
60
40
20
910 920 930 940 950 960 970
Nd (%)
80
70
60
50
40
30
11
Vdd = 26 V
Idq = 2 x 200 mA
10
910 920 930 940 950 960 970
F (MHz)
2/5
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