SGS Thomson Microelectronics DC34, DB4, DB3 Datasheet
FEATURES
V
:32V/34V/40VVERSIONS
BO
LOW BREAKOVERCURRENT
DB3 /DB4 / DC34
TRIGGER DIODES
DESCRIPTION
High reli a bility glas s passiva t i on insurin g
parameter stability and p rot ection aga inst
junction contamination.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
P Power dissipation onprinted circuit
(L = 10 mm)
I
TRM
Tstg
Tj
Repetitive peak on-state current tp =20µs
Storageandoperatingjunction temperaturerange
Ta = 65 °C 150 mW
F= 100 Hz
DO 35
(Glass)
2A
-40to+125
-40to+125
°C
°C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-a)
R
th (j-l)
April 1995
Junction to ambient 400 °C/W
Junction-leads 150 °C/W
1/4
DB3 / DB4 / DC34
ELECTRICALCHARACTERISTICS (Tj = 25°C)
Symbol Parameter Test Conditions Value Unit
DB3 DC34 DB4
V
BO
Breakovervoltage* C = 22nF **
MIN 28 30 35 V
seediagram1
TYP 32 34 40
MAX 36 38 45
[I+V
I-I-VBOI] Breakovervoltage
BO
symmetry
I∆V±I Dynamicbreakover
voltage *
V
I
O
BO
Output voltage* see diagram 2 MIN 5 V
Breakovercurrent * C = 22nF** MAX 100 50 100 µA
C = 22nF **
seediagram1
∆I=[I
to IF=10mA]
BO
seediagram1
MAX ± 3V
MIN 5 V
tr Rise time* seediagram3 TYP 1.5 µs
I
B
Leakagecurrent* VB=0.5VBOmax
MAX 10 µA
seediagram1
* Electrical characteristic applicable inboth forward andreverse directions.
** Connected in parallel with the devices.
DIAGRAM 1 : Current-voltagecharacteristics DIAGRAM 2: Test circuitfor outputvoltage
+I
F
10mA
I
BO
-V + V
I
B
0,5 V
BO
V
-I
F
2/4
220 V
50 Hz
10 k 500 k
0.1 F
D.U.T
R=20
V
O
DIAGRAM3 :Testcircuit see diagram2.
AdjustRforlp=0.5A
l
V
BO
90 %
10 %
t
r
p
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