SGS Thomson Microelectronics DALC112S1 Datasheet

DALC112S1
Application Specific Discretes
A.S.D.
MAINAPPLICATIONS
WhereESD protection for high speed datalines is required:
LAN/ WANequipment ComputerI/O Graphicvideo port Set topbox I/O
DESCRIPTION
ARRAY of 12 diodes configured by cells of 2 diodes, each cell being used to protect signal line fromtransientovervoltagesbyclamping action.
Its very low capacitance allows to protect fast signalswith no distortion.Itis particularlysuitedfor theprotectionof graphicvideo ports.
TM
LOW CAPACITANCEDIODE
ARRAY FOR ESD PROTECTION
SO8
FUNCTIONAL DIAGRAM
FEATURES
ARRAYOF12DIODESFORESDPROTEC T IO N . PEAK REVERSE VOLTAGE V
DIODE. VERYLOWCAPACITANCEPERDIODE:C <5pF. VERYLOWLEAKAGECURRENT : I
COMPLIESWITHTH EFOLL OWINGSTANDAR DS:
IEC1000-4-2lev el3 8kV(airdischa r ge)
6kV(cont actdischar ge)
= 18V PER
R
<2µA.
I/O 1
I/O 2
I/O 3
I/O 4
REF 1
I/O 6
REF 2
I/O 5
January 1998 - Ed: 4
1/3
DALC112S1
TYPICALAPPLICATION
Vcc
DALC112S1
ABSOLUTEMAXIMUM RATINGS
Symbol Parameter Value Unit
V
T
stg
T
j
ELECTRICALCHARACTERISTICS
Symbol Parameter Typ. Max. Unit
V
F
I
R
C
Fig1 :
Inputcapacitancemeasurement
Peak reversevoltage per diode 18 V
Storagetemperaturerange Maximumjunctiontemperature
Forwardvoltage IF= 50 mA 1.3 V Reverseleakage currentper diode VR=15V 2 InputcapacitancebetweenLine and GND
V
= 5 V, V
cc
(seefigure 1 below)
RMS
(T
=25°C).
amb
=25°C).
(T
amb
= 30mV, F = 1 MHz
-55 to + 150 150
7pF
°C °C
µ
A
2/3
I/O
G
REF2
REF1
V
CC
+VCCconnectedbetween REF1 and REF2 Input applied :
Vcc = 5V, V
RMS=30mV,F=1MHz
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