SGS Thomson Microelectronics DA112S1, DA108S1 Datasheet
DA108S1
Application Specific Discretes
A.S.D.
APPLICATION
Protectionof logicsideof ISDNS-interface.
Protectionof I/Olinesof microcontroller.
Signal conditioning.
FEATURES
ARRAYOF8OR12DIODES
LOWINPUTCAPACITANCE
SUITABLEFOR DIGITALLINE PROTECTION
TM
DA112S1
DIODE ARRAY
SO8
FUNCTIONALDIAGRAM: DA108S1
I/O 1
1
8
REF 1
DESCRIPTION
ARRAYof 8 or 12 diodes configuredby cellsof 2
diodes,each cell being used to protect signal line
fromtransientovervoltagesbyclamping action.
COMPLIESWITH FOLLOWINGSTANDARDS :
IEC1000-4-22level 4: 15kV(air discharge)
8kV(contactdischarge)
I/O 2
I/O 3
I/O 4
FUNCTIONALDIAGRAM: DA112S1
I/O 1
I/O 2
I/O 3
I/O 4
2
3
4
1
2
3
4
7
6
5
8
7
6
5
REF 1
REF 2
REF 2
REF 1
I/O 6
REF 2
I/O 5
March 1998 - Ed:4
1/5
DA108S1/ DA112S1
ABSOLUTE MAXIMUM RATINGS (T
amb
=25°C)
Symbol Parameter Value Unit
V
RRM
I
PP
Repetitivepeakreversevoltage(foronesingl ediode) 18 V
Repetitivepeak forwardcurrent* 8/20µs12A
P Powerdissipation 0.73 W
Tstg
Tj
T
L
* Thesurge is repeated afterthe device returns to ambient temperature
Storagetemperaturerange
Maximumoperatingjunctiontemperature
- 55 to+ 150
150
Maximumleadtemperatureforsolderingduring10s. 260 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-a)
Junctiontoambient 170 °C/W
°C
ELECTRICAL CHARACTERISTICS
(T
amb
=25°C)
Symbol Parameter Max. Unit
V
FP
V
F
I
R
Peak forwardvoltage IPP=12A, 8/20 µs DA108S1
DA112S1
9
12
Forwardvoltage IF= 50 mA 1.2 V
Reverseleakagecurrent VR=15V 2 µA
V
2/5
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