DA108S1
Application Specific Discretes
A.S.D.
APPLICATION
Protectionof logicsideof ISDNS-interface.
Protectionof I/Olinesof microcontroller.
Signal conditioning.
FEATURES
ARRAYOF8OR12DIODES
LOWINPUTCAPACITANCE
SUITABLEFOR DIGITALLINE PROTECTION
TM
DA112S1
DIODE ARRAY
SO8
FUNCTIONALDIAGRAM: DA108S1
I/O 1
1
8
REF 1
DESCRIPTION
ARRAYof 8 or 12 diodes configuredby cellsof 2
diodes,each cell being used to protect signal line
fromtransientovervoltagesbyclamping action.
COMPLIESWITH FOLLOWINGSTANDARDS :
IEC1000-4-22level 4: 15kV(air discharge)
8kV(contactdischarge)
I/O 2
I/O 3
I/O 4
FUNCTIONALDIAGRAM: DA112S1
I/O 1
I/O 2
I/O 3
I/O 4
2
3
4
1
2
3
4
7
6
5
8
7
6
5
REF 1
REF 2
REF 2
REF 1
I/O 6
REF 2
I/O 5
March 1998 - Ed:4
1/5
DA108S1/ DA112S1
ABSOLUTE MAXIMUM RATINGS (T
amb
=25°C)
Symbol Parameter Value Unit
V
RRM
I
PP
Repetitivepeakreversevoltage(foronesingl ediode) 18 V
Repetitivepeak forwardcurrent* 8/20µs12A
P Powerdissipation 0.73 W
Tstg
Tj
T
L
* Thesurge is repeated afterthe device returns to ambient temperature
Storagetemperaturerange
Maximumoperatingjunctiontemperature
- 55 to+ 150
150
Maximumleadtemperatureforsolderingduring10s. 260 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-a)
Junctiontoambient 170 °C/W
°C
ELECTRICAL CHARACTERISTICS
(T
amb
=25°C)
Symbol Parameter Max. Unit
V
FP
V
F
I
R
Peak forwardvoltage IPP=12A, 8/20 µs DA108S1
DA112S1
9
12
Forwardvoltage IF= 50 mA 1.2 V
Reverseleakagecurrent VR=15V 2 µA
V
2/5
DA108S1 / DA112S1
Fig.1 :
Input capacitance
V connected between REF1 and REF2
CC
Input applied :
DC bias + 950 mV at 1 MHZ
(RMS)
REF2
I/O
V
CC
G
REF1
36
34
32
30
28
26
24
22
C (pF)
2 4 6 8 10 12 14 160
Typical values
DC bias (V)
V =5V
CC
V = 15 V
CC
Fig.2 :
Typicalpeak forwardvoltagecharacteristics(8/20µs pulse)
VF(V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tj = 25 C
0.001 0.01 0.1 1
Typical values V
o
IF(A)
(V)
F
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
110
Tj = 25 C
Typical values
o
IF(A)
20
3/5
DA108S1/ DA112S1
APPLICATION1 : ISDN Interface Protection
Residuallightningsurges at transformersecondaryare suppressedby DA108S1
APPLICATION 2 : MicrocontrollerI/O portprotection
Vcc
4-6 bit input port
I/O
Vcc
I/O
I/O
I/O
Vcc
Vcc
DA1xS1x
Vcc
µc
IMPORTANT:
4/5
DA108S1must imperativelybe connectedto the reference voltagesby REF1 and REF2.
ORDERCODE
DiodeARRAY
DA108S1 / DA112S1
DA1 08 S 1 RL
RL : Tapeand reel
: tubes
Numberof diodes
MARKING : Logo, Data Code,
DA108S1 DA108S
DA112S1 DA112S
PACKAGEMECHANICAL DATA
SO8(Plastic)
Package: SO8 plastic
Serial
DIMENSIONS
REF.
Millimetres Inches
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.50 0.020
c1 45°(typ)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.15 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8°(max)
Packaging: Preferencepackagingistapeandreel.
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from itsuse. No
license is grantedby implicationor otherwise underany patentorpatent rights ofSGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subjectto changewithoutnotice. This publication supersedes and replacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics products are not authorizedfor useas critical componentsin life supportdevices orsystems withoutexpress
written approval of SGS-THOMSON Microelectronics.
1998 SGS-THOMSON Microelectronics - Printed inItaly - All rights reserved.
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5/5
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