SGS Thomson Microelectronics BUX98APW Datasheet
®
HIGH VOLTAGE NPN POWER TRANSISTOR
■
STMicroelectronics PREFERRED
SALESTYPE
■
NPN TRANSISTOR
■
HIGH VOL T A G E C A PABILITY
■
HIGH CURRENT CAPABILITY
■
FAST SWITCHING SPEED
APPLICATIONS
■
HIGH FREQUENCY AND EFFICENCY
CONVERTERS
■
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX98APW is a silicon Multiepitaxial Mesa
NPN transistor in TO-247 plastic package. It is
intended for use in industrial applications from
single and three-phase mains operation.
BUX98APW
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
I
P
T
Collector-Emitter Voltage (RBE = ≤ 10 Ω)
CER
Collector-Base Voltage (VBE = 0) 1000 V
CES
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 24 A
I
C
Collector Peak Current (tp < 5 ms) 36 A
CM
Base Current 5 A
I
B
Base Peak Current (tp < 5 ms) 8 A
BM
Total Power Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max Operating Junction Temperature 150
T
j
February 2002
case
< 25 oC
1000 V
200 W
o
C
o
C
1/4
BUX98APW
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.63
o
C/W
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CES
I
CEO
I
EBO
V
(BR)EBO
Collector Cut-off
Current (R
= 5 Ω)
BE
Collector Cut-off
Current (V
BE
= 0 )
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
Emitter-Base
V
= 1000 V
CE
V
= 1000 V TC = 125 oC
CE
= 1000 V
V
CE
V
= 1000 V TC = 125 oC
CE
= 450 V 2 mA
V
CE
= 5 V 2 mA
V
EB
I
= 100 mA 7 V
E
200
2
200
2
Breakdown Voltage
(I
= 0)
C
I
V
CEO(sus)
∗ Collector-Emitter
= 200 mA L = 25 mH 450 V
C
Sustaining Voltage
(I
= 0)
B
V
∗ Collector-Emitter
CE(sat)
= 16 A IB = 3.2 A 1.2 V
I
C
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
= 16 A IB = 3.2 A 1.5 V
I
C
Saturation Voltage
RESISTIVE LOAD
on
s
t
f
Turn-on Time
Storage Time
Fall Time
t
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %
V
= 150 V IC = 16 A
CC
I
= - IB2 = 3.2 A 1
B1
3
0.8
µA
mA
µA
mA
µs
µs
µs
2/4
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