SGS Thomson Microelectronics BUX98, BUX98A Datasheet
HIGH POWER NPN SILICON TRANSISTORS
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
APPLICATIONS
■ HIGH FREQUE N CY AND EF FICE N CY
CONVERTERS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
BUX98
BUX98A
1
2
DESCRIPTION
The BUX98 and BUX98A are silicon multiepitaxial
TO-3
(version R)
mesa NPN transistor in jedec TO-3 metal case,
intended and industrial applications from single
and three-phase mains operation.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUT E MAXIMUM RATI NG S
Symbol Parameter Value Unit
BUX98 BUX98A
V
V
V
V
I
I
I
P
T
Collector-Emitter Voltage (RBE = ≤ 10 Ω ) 850 1000 V
CER
Collector-Base Voltage (VBE = 0) 850 1000 V
CES
Collector-Emitter Voltage (IB = 0) 400 450 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 30 A
I
C
Collector Peak Current (tp < 5 ms) 60 A
CM
Collector Peak Current non Rep. (tp < 20 µs) 80 A
CP
Base Current 8 A
I
B
Base Peak Current (tp < 5 ms) 30 A
BM
Total Power Dissipation at T
tot
Storage Temperature -65 to 200
stg
Max Operating Junction Temperature 200
T
j
< 25 oC 250 W
case
o
C
o
C
July 1997
1/4
BUX98 / BUX98A
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CES
I
CEO
I
EBO
V
CEO(sus)
V
CER(sus)
V
CE(sat)
Collector Cut-off
Current (R
= 10 Ω)
BE
Collector Cut-off
Current (V
BE
= 0 )
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
Saturation Voltage
= V
V
CE
VCE = V
V
VCE = V
V
V
CES
T
CES
= V
CE
CES
T
CES
= V
CE
CEO
= 5 V 2 mA
EB
CASE
CASE
= 125 oC
= 125 oC
1
8
400
4
2mA
IC = 200 mA
for BUX98
for BUX98A
400
450
L = 2mH IC = 1 A
for BUX98
for BUX98A
850
1000
for BUX98
I
= 20 A IB = 4 A
C
1.5
for BUX98A
1.5
5
1.6
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
I
= 16 A IB = 3.2 A
C
I
= 24 A IB = 5 A
C
for BUX98
I
= 20 A IB = 4 A
C
for BUX98A
I
= 16 A IB = 3.2 A
C
t
t
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %
Turn-on Time for BUX98 1 µs
on
Storage Time VCC = 150 V IC = 20 A 3 µs
s
t
Fall Time IB1 = - IB2 = 4 A 0.8 µs
f
Turn-on Time for BUX98A 1 µs
on
Storage Time VCC = 150 V IC = 16 A 3 µs
s
t
Fall Time IB1 = - IB2 = 3.2 A 0.8 µs
f
1.6
µA
mA
µA
mA
V
V
V
V
V
V
V
V
V
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