HIGH VOLTAGE SILICON POWER TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPA BILITY (450V V
■ MINIMUM LO T- TO- LO T SPR E AD FO R
RELIAB LE OPERATION
■ HIGH DC CURRENT GAIN
APPLICATIONS
■ FLYBACK AND FORW ARD S INGLE
TRANSI ST OR LOW POW ER CO NV ERT E RS
CEO
)
BUX87
1
2
3
DESCRIPTION
The BUX87 is manufactured using High Voltage
SOT-32
Multi Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = -1.5V) 1000 V
CES
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
I
Collector Current 0.5 A
C
Collector Peak Current (tp < 5 ms) 1 A
CM
I
Base Current 0.3 A
B
Base Peak Current (tp < 5 ms) 0.6 A
BM
Total Dissipation at Tc = 25 oC40W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
June 1997
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BUX87
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Emitter Cut-off Current
(I
= 0)
C
Collector-Emitter
= 1000 V
V
CE
V
= 1000 V Tj = 125 oC
CE
= 5 V 1 mA
V
EB
100
1
IC = 100 mA 450 V
Sustaining Voltage
V
BEO
Collector-Base
IC = 10 mA 5 V
Sustaining Voltage
V
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
IC = 0.1 A IB = 0.01 A
I
= 0.2 A IB = 0.02 A
C
0.8
1
IC = 0.2 A IB = 0.02 A 1 V
Saturation Voltage
∗ DC Current Gain IC = 50 mA VCE = 5 V
h
FE
f
Transition Frequency IC = 50 mA VCE = 10 V f=1MHz 20 MHz
T
RESISTIVE LOAD
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
Storage Time
Fall Time
I
= 40 mA VCE = 5 V 12
C
V
= 250 V IC = 200 mA
CC
I
= 40 mA IB2= -80 mA
B1
t
= 20 µs
p
50
4.5
0.5
µA
mA
V
V
µs
µs
Safe Operating Are a Derating Curves
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