SGS Thomson Microelectronics BUX80 Datasheet
BUX80
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ FAST SWITCHING SPEED
APPLICATIONS
■ SWITCHING R E G ULAT O RS
■ MOTOR CONTROL
■ HIGH FREQ UE NC Y AND EFF ICE NCY
CONVERTERS
1
2
DESCRIPTION
The BUX80 is a silicon multiepitaxial mesa NPN
TO-3
transistor in Jedec TO-3 metal case, particularly
intended for converters, inverters, switching
regulators and motors control system
applications.
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
P
T
Collector-emitter Voltage (VBE = 0) 800 V
CES
Collector-emitter Voltage (RBE = 50Ω) 500 V
CER
Collector-emitter Voltage (IB = 0) 400 V
CEO
Emitter-base Voltage (Ic = 0) 10 V
EBO
Collector Current 10 A
I
C
Collector Peak Current 15 A
CM
Base Current 5 A
I
B
Total Power Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max Operating Junction Temperature 150
T
j
≤ 40 oC 100 W
case
o
C
o
C
June 1997
1/4
BUX80
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.1
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 800 V
V
CE
V
= 800 V T
CE
= 10 V 10 mA
V
BE
= 100 mA 400 V
I
C
case
= 125oC
1
3
SustainingVoltage
(I
= 0)
B
V
CER(sus)
∗ Collector-Emitter
I
= 100 mA 500 V
C
Sustaining
Voltage (R
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 1.2 A VCE = 5 V 30
FE
t
t
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Turn-on Time IC = 5 A IB1 = 1 A
on
Storage Time IC = 5 A IB1 = 1 A
s
t
Fall Time IC = 5 A IB1 = 1 A
f
= 50 Ω)
BE
IC = 5 A IB = 1 A
I
= 8 A IB = 2.5 A
C
IC = 5 A IB = 1 A
I
= 8 A IB = 2.5 A
C
V
= 250 V
CC
I
= - 2 A VCC= 250 V
B2
I
= - 2 A VCC= - 250 V
B2
1.5
3
1.4
1.8
0.5 µs
3.5 µs
0.5 µs
mA
mA
V
V
V
V
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