SGS Thomson Microelectronics BUX48C Datasheet
BUX48C/BUV48C
®
HIGH VOLTAGE FAST-SWITCHING
■ NPN TRANSISTORS
■ HIGH VOLTAGE CAPABILITY
■ FAST SWITCHING SPEED
APPLICATIONS
■ LINEAR AND SWITCHI NG INDUST RIAL
EQUIPMENT
DESCRIPTION
The BUX48C, BUV48C and BUV48CFI are silicon
Multiepitaxial Mesa NPN transistors mounted
respectively in TO-3 metal case, TO-218 plastic
package and ISOWATT218 fully isolated
package. They are particulary intended for
switching and industrial applications from single
and tree-phase mains.
BUV48CFI
NPN POWER TRANSISTORS
1
2
TO-3
1
2
TO-218
3
ISOWATT218
INTERNAL SCHEMAT I C DIAGRAM
3
2
1
For TO-3 Package Others Packages
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
V
V
V
V
I
I
I
P
T
January 2000
Collector-Emitter Voltage (RBE = 10Ω)
CER
Collector-Emitter Voltage (VBE = 0)
CES
Collector-Emitter Voltage (IB = 0)
CEO
Emitter-Base Voltage (IC = 0)
EBO
I
Collector Current
C
Collector Peak Current (tp <5ms)
CM
Collector Peak Current non repetitive (tp <20µs)
CP
I
Base Current
B
Base Peak Current (tp <5ms)
BM
Total Dissipation at Tc = 25 oC
tot
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
TO-3 TO-218 ISOWATT218
175 125 55 W
-65 to 200 -65 to 150 -65 to 150
200 150 150
1200 V
1200 V
700 V
7V
15 A
30 A
55 A
4A
20 A
o
C
o
C
1/6
BUX48C/BUV48C/BUV48CFI
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
TO-3 TO-218 ISOWATT218
1 1 2.2
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CES
I
CEO
I
EBO
V
CEO(SUS)
V
CER(SUS)
V
CE(sat)
V
BE(sat)
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Collector Cut-off Current
= 10 Ω)
(R
BE
Collector Cut-off Current
(V
= 0)
BE
Collector Cut-off Current
(I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗
Collector-Emitter Sustaining
Voltage (I
∗
Collector-Emitter Sustaining
Voltage (R
∗
Collector-Emitter Saturation
= 0)
B
= 10 Ω)
BE
Voltage
∗
Base-Emitter Saturation
Voltage
= 1200 V
V
CE
V
= 1200 V T
CE
= 1200 V
V
CE
V
= 1200 V T
CE
= V
V
CE
CEO
= 6 V
V
EB
= 100 mA
I
C
IC = 0.5 A V
clamp
L = 2 mH
I
= 6 A IB = 1.5 A
C
I
= 10 A IB = 4 A
C
I
= 6 A IB = 1.5 A
C
I
= 10 A IB = 4 A
C
= 125 oC
case
= 125 oC
case
= 1200 V
500
4
500
3
1mA
1mA
700 V
1200 V
1.5
3
1.5
2
RESISTIVE SWITCHING TIMES
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
t
on
s
t
f
Turn-on Time
Storage Time
Fall Time
V
= 250 V IC = 6 A
CC
I
= - IB2 = 1.5 A
B1
0.5 1 µs
1.5 3 µs
0.2 0.7 µs
µA
mA
µA
mA
V
V
V
V
INDUCTIVE SWI T CHI NG TIM ES
Symbol Parameter Test Conditions Min. Typ. Max. Unit
2/6
t
s
t
f
t
s
t
f
Storage Time
Fall Time
Storage Time
Fall Time
V
= 250 V IC = 6 A
CC
I
= - IB2 = 1.5 A
B1
V
= 250 V IC = 6 A
CC
I
= - IB2 = 1.5 A
B1
T
= 125 oC
C
2 µs
0.15 µs
36µs
0.33 0.60 µs
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