SGS Thomson Microelectronics BUX48A, BUX48, BUV48AFI, BUV48A Datasheet
BUX48/48A
®
HIGH POWER NPN SILICON TRANSISTORS
■ STMicroelectronics P REFE RRE D
SALESTYPES
■ NPN TRAN SISTOR
■ HIGH VOLTAGE CAPABILITY
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
APPLICATIONS
■ SWITCH MODE PO WER SUPPLI ES
■ FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUX48/A, BUV48A and BUV48AFI are
silicon Multiepitaxial Mesa NPN transistors
mounted respectively in TO-3 metal case, TO-218
plastic package and ISOWATT218 fully isolated
package. They are particulary intended for
switching and industrial applications from single
and tree-phase mains.
BUV48A/V48AFI
1
2
TO-3
1
ISOWATT218
INTERNAL SCHEMAT I C DIAGRAM
2
TO-218
3
3
2
1
ABSOLUTE MAXI M UM RATI NG S
Symbol
V
V
V
V
Collector-Emitter Voltage (RBE = 10Ω)
CER
Collector-Emitter Voltage (VBE = 0) 850 1000 V
CES
Collector-Emitter Voltage (IB = 0) 400 450 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
I
Collector Current 15 A
C
I
Collector Peak Current 30 A
CM
I
Collector Peak Current non repetitive (tp <20µs)
CP
I
Base Current 4 A
B
I
Base Peak Current 20 A
BM
P
Total Dissipation at Tc = 25 oC 175 125 55 W
tot
T
Storage Temperature -65 to200 -65 to 150 -65 to 150
stg
T
Max. Operating Junction Temperature 200 150 150
j
January 2000
Parameter Value Unit
For TO-3 Package Others Packages
BUX48 BUX48A
BUV48A
BUV48AFI
850 1000 V
55 A
TO-3 TO-218 ISOWATT218
o
C
o
C
1/7
BUX48 / BUX48A / BUV48A / BUV48AFI
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1 1 2.2
TO-3 TO-218 ISOWATT218
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CER
I
EBO
V
CEO(SUS)
V
EBO
V
CE(sat)
Collector Cut-off Current
(V
= 0)
BE
Collector Cut-off Current
= 10 Ω)
(R
BE
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter Sustaining
Voltage (I
= 0)
B
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter Saturation
Voltage
= rated V
V
CE
V
rated V
CE =
V
= rated V
CE
V
rated V
CE =
= 5 V 1 mA
V
EB
= 200 mA L= 25mH
I
C
for BUX48
for BUX48A/V48A/V48AFI
= 50 mA 7 30 V
I
E
CES
Tc = 125 oC
CES,
CER
Tc = 125 oC
CER,
400
450
200
2
500
4
for BUX48
I
= 10 A IB = 2 A
C
I
= 15 A IB = 4 A
C
I
= 15 A IB = 3 A
C
1.5
3.5
5
for BUX48A/V48A/V48AFI
1.5
5
1.6
V
BE(sat)
∗ Base-Emitter Saturation
Voltage
I
= 8 A IB = 1.6 A
C
I
= 12 A IB = 2.4 A
C
for BUX48
I
= 10 A IB = 2 A
C
for BUX48A/V48A/V48AFI
I
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
= 8 A IB = 1.6 A
C
1.6
µA
mA
µA
mA
V
V
V
V
V
V
V
V
V
RESISTIVE SWITCHING TIMES
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
t
2/7
Turn-on Time for BUX48
on
Storage Time for BUX48
s
t
Fall Time for BUX48
f
V
= 150 V IC = 10 A
CC
I
= 2 A
B1
for BUX48A/V48A/V48AFI
V
= 150 V IC = 8 A
CC
I
= 1.6 A
B1
V
= 150 V IC = 10 A
CC
I
= - IB2 = 2 A
B1
for BUX48A/V48A/V48AFI
V
= 150 V IC = 8 A
CC
I
= - IB2 = 1.6 A
B1
V
= 150 V IC = 10 A
CC
I
= - IB2 = 2 A
B1
for BUX48A/V48A/V48AFI
V
= 150 V IC = 8 A
CC
I
= - IB2 = 1.6 A
B1
1
1
3
3
0.8
0.8
µs
µs
µs
µs
µs
µs
BUX48 / BUX48A / BUV48A / BUV48AFI
INDUCTIVE SWI T CHI NG TIM ES
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
Storage Time for BUX48
s
t
Fall Time for BUX48
f
V
= 300 V IC = 10 A
CC
LB = 3 µH
V
= -5 V IB1 = 2 A
BE
same conditions at T
= 125 oC
c
for BUX48A/V48A/V48AFI
V
= 300 V IC = 8 A
CC
= 3 µH
L
B
V
= -5 V IB1 = 1.6 A
BE
same conditions at T
V
= 300 V IC = 10 A
CC
= 125 oC
c
LB = 3 µH
V
= -5 V IB1 = 2 A
BE
same conditions at T
= 125 oC
c
for BUX48A/V48A/V48AFI
V
= 300 V IC = 8 A
CC
LB = 3 µH
V
= -5 V IB1 = 1.6 A
BE
same conditions at T
= 125 oC
c
2.7
5
3
5
0.16
0.4
0.13
0.4
µs
µs
µs
µs
µs
µs
µs
µs
3/7
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