SGS Thomson Microelectronics BUX22 Datasheet
HIGH CURR ENT NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
APPLICATIONS
■ MOTOR CONTROL
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
■ HIGH POWER TO-3 PACKAGE
BUX22
1
2
DESCRIPTION
The BUX22 is a silicon multiepitaxial planar NPN
transistor in modified Jedec TO-3 metal case,
TO-3
(version P)
intended for use in switching and linear
applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
P
T
Collector-base Voltage (IE = 0) 300 V
CBO
Collector-emitter Voltage (VBE = - 1.5V) 300 V
CEX
Collector-emitter Voltage (IB = 0) 250 V
CEO
Emitter-base Voltage (Ic = 0) 7 V
EBO
Collector Current 40 A
I
C
Collector Peak Current (tp = 10 ms) 50 A
CM
Base Current 8 A
I
B
Total Power Dissipation at T
tot
Storage Temperature -65 to 200
stg
Max Operating Junction Temperature 200
T
j
≤ 25 oC 350 W
case
o
C
o
C
June 1997
1/4
BUX22
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
CEX
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
B
Collector Cut-off
Current
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 200 V 3 mA
V
CE
VCE = 300 V VBE = -1.5V
T
= 125 oC
case
V
= 300 V VBE = -1.5V
CE
= 5 V 1 mA
V
EB
3
12
IC = 200 mA 250 V
Sustaining Voltage
V
V
CE(sat)
V
BE(sat)
EBO
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
= 50 mA 7 V
I
E
IC = 10 A IB = 1 A
I
= 20 A IB = 2.5 A
C
0.2
0.3211.5
IC = 20 A IB = 2.5 A 1.1 1.5 V
Saturation Voltage
h
∗ DC Current Gain IC = 10 A VCE = 4 V
FE
I
S/b
Second Breakdown
Collector Current
f
Transistor Frequency VCE = 15 V IC = 2 A
T
I
= 20 A VCE = 4 V
C
VCE = 140 V t = 1 s
V
= 20 V t = 1 s
CE
20
60
10
0.15
17.5
10 MHz
f = 10 MHz
t
t
∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 %
Turn-on Time IC = 20 A IB1 = 2.5 A
on
Storage Time
s
Fall Time
t
f
Clamped E
Collector Current
s/b
V
= 100 V
CC
IC = 20 A IB1 = 2.5 A
I
= - 2.5 A VCC = 100V
B2
= 250 V
V
clamp
L = 500 µH
0.22 1.3 µs
1.5
0.1720.5
25 A
mA
mA
V
V
A
A
µs
µs
2/4
Loading...