SGS Thomson Microelectronics BUW1215 Datasheet

®

HIGH VOLTAGE FAST-SWITCHING

■

STMicroelectronics PREFERRED SALESTYPE

■

HIGH VOLTAGE CA PA BILIT Y (> 1500 V)

■

VERY HIGH SWITCHING SPEED

APPLICATIONS:

■

HORIZONTAL DEFLECTION FOR HIGH-END COLOUR TV AND 21" MONITORS

DESCRIPTION

The BUW1215 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.

BUW1215

NPN POWER TRANSISTOR

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRA M

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V V V

I

I P

T

Collector-Base Voltage (IE = 0) 1500 V

CBO

Collector-Emitter Voltage (IB = 0) 700 V

CEO

Emitter-Base Voltage (IC = 0) 10 V

EBO

Collector Current 16 A

I

C

Collector Peak Current (tp < 5 ms) 22 A

CM

Base Current 9 A

I

B

Base Peak Current (tp < 5 ms) 12 A

BM

Total Dissipation at Tc = 25 oC200W

tot

Storage Temperature -65 to 150

stg

Max. Operating Junction Temperature 150

T

j

o

C

o

C

February 2002

1/7

BUW1215

THERMAL DATA

R

thj-case

Thermal Resistance Junction-case Max 0.63

o

C/W

ELECTRICAL CHARACT ER ISTI CS

= 25 oC unless otherwise specified)

(T

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CES

I

EBO

V

CEO(sus)

Collector Cut-off Current (V

BE

= 0)

Emitter Cut-off Current (I

= 0)

C

∗ Collector-Emitter

= 1500 V

V

CE

V

= 1500 V Tj = 125 oC

CE

= 5 V 100 µA

V

EB

I

= 100 mA 700 V

C

0.2 2

Sustaining Voltage (I

= 0)

B

V

EBO

Emitter-Base Voltage (I

V

∗ Collector-Emitter

CE(sat)

= 0)

C

= 10 mA 10 V

I

E

= 12 A IB = 2.4 A 1.5 V

I

C

Saturation Voltage

V

∗ Base-Emitter

BE(sat)

= 12 A IB = 2.4 A 1.5 V

I

C

Saturation Voltage

h

∗ DC Current Gain I

FE

RESISTIVE LOAD

s

t

f

Storage Time Fall Time

t

INDUCTIVE LOAD

t

s

t

f

Storage Time Fall Time

= 12 A VCE = 5 V

C

I

= 12 A VCE = 5 V Tj = 100 oC

C

V

= 400 V IC = 12 A

CC

I

= 2 A I

B1

I

= 12 A f = 31250 Hz

C

I

= 2 A I

B1

V

ceflyback

= 1050 sin

= -6 A 1.5

B2

= -1.5 A

B2



π



6

10

t V





5





7

10 14

5

110

4

220

mA mA

µs ns

INDUCTIVE LOAD

s

t

f

Storage Time Fall Time

t

IC = 6 A f = 64 KHz I

= 1 A V

B1

V

ceflyback

= 1200 sin

BE(off)



π



5



= -2 A

10



6

 

t V

* Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area Thermal Impedance

2/7

3.5

180

µs ns

BUW1215

Derating Curve

Collector Emitter Saturation Voltage

DC Current Gain

Base Emitter Saturation Voltage

Power Losses at 64 KHz

Switching Time Inductive Load at 64 KHz (see figure 2)

3/7