SGS Thomson Microelectronics BUV48CFI, BUV48C Datasheet

BUX48C/BUV48C



HIGH VOLTAGE FAST-SWITCHING

■ NPNTRANSISTORS

■ HIGHVOLTAGECAPABILITY

■ FAST SWITCHING SPEED

APPLICATIONS

■ LINEARANDSWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

The BUX48C,BUV48Cand BUV48CFI are silicon
Multiepitaxial Mesa NPN transistors mounted
respectively in TO-3 metal case, TO-218 plastic
package and ISOWATT218 fully isolated
package. They are particulary intended for
switching and industrial applications from single
and tree-phasemains.

BUV48CFI

NPN POWER TRANSISTORS

1

2

TO-3

1

TO-218

3

2

ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

3

2

1

For T O -3 Pa c kage Other s P ac kages

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Uni t

V
V
V
V

I

I

I

P

T

January 2000

Collector-E mit t e r Voltage (RBE=10Ω)

CER

Collector-E mit t e r Voltage ( VBE=0)

CES
CEO Collector-E mit t e r Voltage ( I

Emitter-Bas e Volt age (IC=0)

EBO

I

Collector Cur re nt

C

Collector P e ak Cu rr ent (tp<5ms)

CM

CP Collector P e ak Cu rr ent non repet itive (t

I

Base Current

B

Base P eak Curr ent (t p <5ms)

BM

Total Dissipation at Tc=25oC

tot

Storage Tem perature

stg

T

Max. Operat ing Junct ion Tem pe rat ure

j

B

=0)

<20µs)

p

TO-3 TO-218 ISOWATT 218

175 125 55 W

-65 to 200 -65 to 150 -65 t o 150
200 150 150

1200 V
1200 V

700 V

7V
15 A
30 A
55 A

4A
20 A

o

C

o

C

1/6

BUX48C/BUV48C/BUV48CFI

THERMAL DATA

R

thj-case T hermal Resis tance Junction- case Max

TO -3 TO - 218 ISO WATT218

11 2.2

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwisespecified)

case

Symb o l Parameter Test C o n ditio ns Mi n. Typ. Max. Unit

I

CER

I

CES

I

CEO

I

EBO

V

CEO(SUS)

V

CER(SUS)

V

CE(sat)

Collec t or Cut -of f Current

=10Ω)

(R

BE

Collec t or Cut -of f Current

=0)

(V

BE

Collec t or Cut -of f Current

=0)

(I

B

Emit ter Cut- off C urr ent

=0)

(I

C

∗

Collector-Emit ter Sustaining
Voltage (I

∗

Collector-Emit ter Sustaining
Voltage (R

∗

Collec t or -Emitt er Saturation

B

BE

=0)

=10Ω)

Voltage

V

BE(sat)

∗

Base-Emitt er Sat uration
Voltage

∗

Pulsed: Pulse duration = 300 µs, duty cycle1.5 %

V

= 1200 V

CE

= 1200 V T

V

CE

V

= 1200 V

CE

= 1200 V T

V

CE

V

CE=VCEO

V

=6V

EB

I

=100mA

C

I

=0.5A V

C

clamp

L=2mH

=6A IB=1.5A

I

C

=10A IB=4A

I

C

=6A IB=1.5A

I

C

I

=10A IB=4A

C

= 125oC

case

= 125oC

case

= 1200 V

700 V

1200 V

500

4

500

3
1mA

1mA

1.5
3

1.5
2

RESISTIVESWITCHINGTIMES

Symb o l Paramet er Test C o n ditio ns Mi n. Typ. Max. Un it

t

t

on

s

t

f

Turn-on T ime
St orage Tim e
Fall Time

= 250 V IC=6A

V

CC

I

=-IB2=1.5A

B1

0.5 1 µs

1.5 3 µs

0.2 0.7 µs

µA

mA

µA

mA

V
V

V
V

INDUCTIVE SWITCHINGTIMES

Symb o l Paramet er Test C o n ditio ns Mi n. Ty p . Max. Un i t

2/6

t

s

t

f

t

s

t

f

St orage Tim e
Fall Time
St orage Tim e

Fall Time

= 250 V IC=6A

V

CC

=-IB2=1.5A

I

B1

V

= 250 V IC=6A

CC

=-IB2=1.5A

I

B1

=125oC

T

C

2 µs

0.15 µs
36µs

0.33 0.60 µs