SGS Thomson Microelectronics BUV298V Datasheet
NPN TRANSISTOR POWER MODULE
■ NPNTRANSISTOR
■ HIGH CURRENTPOWERBIPOLARMODULE
■ VERYLOW R
■ SPECIFIEDACCIDENTAL OVERLOAD
AREAS
■ ISOLATEDCASE (2500VRMS)
■ EASY TO MOUNT
■ LOW INTERNALPARASITIC INDUCTANCE
JUNCTION CASE
th
BUV298V
APPLICATIONS:
■ MOTORCONTROL
■ SMPS& UPS
■ WELDINGEQUIPMENT
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
CEO(sus)
V
I
I
P
T
V
Collector-Emitter Voltage (VBE= -5 V) 1000 V
CEV
Collector-Emitter Voltage (IB= 0) 450 V
Emitter-Base Voltage (IC=0) 7 V
EBO
Collect or Current 50 A
I
C
Collect or Peak Current (tp=10ms) 75 A
CM
Base Current 10 A
I
B
Base Peak Current (tp=10ms) 16 A
BM
Total Dissipat ion at Tc=25oC 250 W
tot
Stora ge T emperature -55 to 150
stg
Max. Oper at i ng Junction Temperature 150
T
j
Insul at ion Withst and Voltage (A C-RMS) 2500 V
ISO
o
C
o
C
June 1997
1/7
BUV298V
THERMAL DATA
R
thj-case
R
thc-h
Ther mal Resistance Junct ion- c ase Max
Ther mal Resistance Case-heatsink With C onductive
Gr ease Applied Max
0.5
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(SUS)
Collector C ut -off
Current (R
BE
=5Ω)
Collector C ut -off
Current (V
BE
=-5V)
Emit ter Cut-of f C urr ent
=0)
(I
C
* Collector-Emitter
Sust aining V oltage
∗ DC Cur rent Gain IC=32A VCE=5V 12
h
FE
V
∗ Co llector-Em it t er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
di
/dt Rate of Rise of
C
On-stat e Collector
(3 µs)•• Collector-Emitter
V
CE
Dynamic Volt age
V
(5 µs)••Collector-Em itter
CE
Dynamic Volt age
V
t
t
CEW
St orage Time
s
t
Fall T ime
f
Cross-over Time
c
Maximum Collector
Emit ter Voltage
Wit hout S nubber
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
V
CE=VCEV
VCE=V
V
CE=VCEV
VCE=V
V
=5V 2 mA
EB
IC=0.2A L=25mH
= 450 V
V
clamp
IC=32A IB=6.4A
=32A IB=6.4A Tj=100oC
I
C
IC=32A IB=6.4A
=32A IB=6.4A Tj=100oC
I
C
VCC=300V RC=0 tp=3µs
I
=9.6A Tj=100oC
B1
VCC=300V RC=9.3Ω
=9.6A Tj= 100oC
I
B1
VCC=300V RC=9.3Ω
I
=9.6A Tj= 100oC
B1
IC=32A VCC=50V
=-5V RBB=0.39Ω
V
BB
= 450 V IB1=6.4A
V
clamp
L=78µHT
I
=48A IB1=6.4A
CWo f f
=-5V VCC=50V
V
BB
L=52µHR
= 125oC
T
j
CEV
CEV
Tj=100oC
Tj=100oC
=100oC
j
=0.39Ω
BB
450 V
0.35
0.6
1
0.9
160 210 A/µs
4.5 8 V
2.5 4 V
3.2
0.25
0.5
450 V
0.4
2
0.4
2
1.2
2
1.5
1.5
4.5
0.4
0.7
mA
mA
mA
mA
V
V
V
V
µs
µs
µs
2/7
BUV298V
Safe Operating Areas
Derating Curve
ThermalImpedance
Collector-emitter Voltage Versus
base-emitterResistance
CollectorEmitter SaturationVoltage
Base-EmitterSaturationVoltage
3/7
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