NPN TRANSISTOR POWER MODULE
■ HIGH CURRENTPOWER BIPOLAR MODULE
■ VERY LOW R
■ SPECIFIEDACCIDENTAL OVERLOAD
AREAS
■ ISOLATEDCASE (2500V RMS)
■ EASY TO MOUNT
■ LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIALAPPLICATIONS:
■ MOTOR CONTROL
■ SMPS & UPS
■ WELDING EQUIPMENT
JUNCTION CASE
th
BUV298AV
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
CEO(sus)
V
I
I
P
T
V
Collector-Emitter Voltage (VBE= -5 V) 1000 V
CEV
Collector-Emitter Voltage (IB= 0) 450 V
Emitter-Base Voltage (IC=0) 7 V
EBO
Collector Current 50 A
I
C
Collector Peak Current (tp=10ms) 75 A
CM
Base Current 10 A
I
B
Base Peak Current(tp=10ms) 16 A
BM
Tota l Dissipat io n at Tc=25oC 250 W
tot
Storage Temperature -55 to 150
stg
Max. Ope ratingJunct ion Temperature 150
T
j
Insulation Withstand Voltage (AC-RMS) 2500
ISO
o
C
o
C
o
C
September1997
1/7
BUV298AV
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
0.5
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(SUS)
h
FE
V
CE(sat)
V
BE(sat)
di
C
(3 µs) Collector-Emitter
V
CE
(5 µs) Collector-Emitter
V
CE
t
t
V
CEW
∗ Pulsed:Pulseduration = 300 µs,duty cycle 1.5 %
Collector Cut-off
Curren t (R
BE
=5Ω)
Collector Cut-off
Curren t (V
BE
=-5V)
Emitter Cut-off Current
(I
=0)
C
* Co lle ctor- Em it t e r
Sustaining Voltage
V
CE=VCEV
VCE=V
V
CE=VCEV
VCE=V
=5V 2 mA
V
EB
IC=0.2A L=25mH
V
= 450 V
clamp
CEV
CEV
Tj= 100oC
Tj= 100oC
450 V
∗ DC Current Gain IC=32A VCE=5V 12
∗ Collector-Emitter
Saturation Voltage
∗ Ba se -Emit ter
Saturation Voltage
/dt RateofRiseof
On-state Collector
IC=32A IB= 6.4 A
I
=32A IB=6.4A Tj= 100oC
C
IC=32A IB= 6.4 A
I
=32A IB=6.4A Tj= 100oC
C
VCC=300V RC=0 tp=3µs
I
=9.6A Tj= 100oC
B1
160 210 A/µs
VCC= 300 V RC=9.3Ω
Dynamic Voltage
I
=9.6A Tj= 100oC
B1
VCC= 300 V RC=9.3Ω
Dynamic Voltage
Storage Time
s
Fall Time
t
f
Cross-over Time
c
Maximum Co lle ctor
Emitter Voltage
Withou t Snubber
I
=9.6A Tj= 100oC
B1
I
=32A VCC=50V
C
V
=-5V RBB= 0.39 Ω
BB
V
= 450 V IB1=6.4A
clamp
L=78µHT
I
=48A IB1=6.4A
CWo f f
V
=-5V VCC=50V
BB
L=52µHR
T
=125oC
j
= 100oC
j
=0.39Ω
BB
450 V
0.4
2
0.4
2
0.35
0.6
1
0.9
1.2
2
1.5
1.5
4.5 8 V
2.5 4 V
3.2
0.25
0.5
4.5
0.4
0.7
mA
mA
mA
mA
V
V
V
V
µs
µs
µs
2/7
BUV298AV
Safe OperatingAreas
Derating Curve
Thermal Impedance
Collector-emitter Voltage Versus
base-emitterResistance
CollectorEmitter Saturation Voltage
Base-Emitter Saturation Voltage
3/7
BUV298AV
ReverseBiased SOA
ReverseBiased AOA
FowardBiased SOA
ForwardBiased AOA
Switching Times Inductive Load
4/7
SwitchingTimes Inductive Load Versus
Temperature
Dc Current Gain Turn-onSwitching Test Circuit
(1) Fast electronics switch (2) Non-inductiveload
Turn-onSwitching Waveforms
BUV298AV
Turn-offSwitching Test Circuit
(1) Fast electronic switch (2) Non-inductiveload
(3) Fast recovery rectifier
Turn-offSwitching Waveforms
5/7
BUV298AV
ISOTOPMECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003
G 31.5 31.7 1.240 1.248
H 4 0.157
J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193
M 37.8 38.2 1.488 1.503
N 4 0.157
O 7.8 8.2 0.307 0.322
mm inch
G
A
B
O
N
D
E
F
H
J
C
K
L
M
6/7
BUV298AV
Informationfurnished is believed to be accurateand reliable. However, SGS-THOMSON Microelectronicsassumes no responsabilityfor the
consequencesof use of such information nor for any infringementof patents or other rightsof third parties which may results fromits use. No
license is grantedby implicationor otherwiseunder any patentor patentrights of SGS-THOMSON Microelectronics.Specifications mentioned
in thispublication are subjectto change withoutnotice. This publicationsupersedesand replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorizedforuseas critical componentsinlife support devicesorsystems withoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printed in Italy - All RightsReserved
Australia- Brazil - Canada - China - France- Germany- Hong Kong - Italy - Japan- Korea -Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain- Sweden- Switzerland- Taiwan -Thailand - UnitedKingdom - U.S.A
SGS-THOMSONMicroelectronicsGROUP OF COMPANIES
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