SGS Thomson Microelectronics BUV28 Datasheet
SILICON NPN SWITCHING TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ VERY LOW SATURATION VOLTAGE
■ FAST TURN-OFF AND TURN-O N
APPLICATIONS:
■ SWITCHING REGULATOR S
■ SOLENOID / RELAY DRIVERS
DESCRIPTION
High speed transistor suited for low voltage
applications.
High frequency and efficiency converters
switching regulators motor control.
TO-220
BUV28
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
P
T
Collector-base Voltage (IE = 0) 400 V
CBO
Collector-Emitter Voltage (IB = 0) 200 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 10 A
I
C
Collector Peak Current 15 A
CM
Base Current 2 A
I
B
Base Peak Current 4 A
BM
Total Dissipation at Tc < 25 oC85W
tot
Total Dissipation at Tc < 60 oC65W
tot
Storage Temperature -65 to +175
stg
Max. Operating Junction Temperature 175
T
j
o
C
o
C
June 1997
1/4
BUV28
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.76
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEX
Collector Cut-off
Current (R
= 50Ω)
BE
Collector Cut-off
= 400V T
V
CE
VCE = 400V
= 125oC3mA
c
= -1.5V Tc = 125oC1mA
VBE
Current
I
EBO
V
CEO(sus)
Emitter Cut-off
Current (I
= 0)
C
∗ Collector-Emitter
= 5 V 1 mA
V
EB
IC = 0.2 A L = 25mH 200 V
Sustaining Voltage
V
V
CE(sat)
V
BE(sat)
EBO
Emitter-Base
Voltage (I
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
= 0)
C
= 50mA 7 30 V
I
E
IC = 3A IB = 0.3A
I
= 6A IB = 0.6A
C
0.7
1.5
IC = 6A IB = 0.6A 2 V
Saturation Voltage
RESISTIVE LOAD
on
s
t
f
Storage Time
Fall Time
Turn-on Time
t
t
V
= 150V IC = 6A
CC
V
= - 6V IB1 = 0.6A
BE
R
= 5Ω
BB
0.3
0.5
0.1
1
1.5
0.25
INDUCTIVE LOAD
t
t
∗ Pulsed: Pulse duration = 300µs, duty cycle = 2 %
s
t
f
s
t
f
Storage time
Fall Time
Storage Time
Fall Time
V
= 150V IC = 6A
CC
I
= 0.6A VBE = - 5V
B1
L
=1µH
B
V
= 150V IC = 6A
CC
I
= 0.6A VBE = - 5V
B1
L
= 1µH Tj = 125oC
B
1
0.04
3
0.2
V
V
µs
µs
µs
µs
µs
µs
µs
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