MEDIUM POWER NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ FAST SWITCHING SPEED
■ LOW COLLECTOR EMITTER SATURATION
APPLICATIONS
■ SWITCHING REGULATOR S
■ MOTOR CONTROL
DESCRIPTION
The BUV27 is a Multiepitaxial Planar NPN
Transistor in TO-220 package. It is intended for
use in high frequency and efficency converters,
switching regulators and motor control.
TO-220
BUV27
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
P
T
Collector-base Voltage (IE = 0) 240 V
CBO
Collector-Emitter Voltage (IB = 0) 120 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 12 A
I
C
Collector Peak Current 20 A
CM
Base Current 4 A
I
B
Base Peak Current 6 A
BM
Total Dissipation at Tc < 25 oC85W
tot
Total Dissipation at Tc < 60 oC65W
tot
Storage Temperature -65 to +175
stg
Max. Operating Junction Temperature 175
T
j
o
C
o
C
June 1997
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BUV27
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.76
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEX
Collector Cut-off
Current (R
= 50Ω)
BE
Collector Cut-off
= 240V T
V
CE
VCE = 240V
= 125oC
c
= -1.5V Tc = 125oC1mA
VBE
3mA
Current
I
EBO
V
CEO(sus)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 5 V 1 mA
V
EB
IC = 0.2 A L = 25mH 120 V
Sustaining Voltage
V
V
CE(sat)
V
BE(sat)
EBO
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
= 50mA 7 30 V
I
E
IC = 4A IB = 0.4A
I
= 8A IB = 0.8A
C
0.7
1.5
IC = 8A IB = 0.8A 2 V
Saturation Voltage
RESISTIVE LOAD
on
s
t
f
Turn-on Time
Storage Time
Fall Time
t
t
V
= 90V IC = 8A
CC
V
= - 6V IB1 = 0.8A
BE
R
= 3.75Ω
BB
0.4
0.5
0.12
0.8
1.2
0.25
INDUCTIVE LOAD
t
t
∗ Pulsed: Pulse duration = 300µs, duty cycle = 2 %
s
t
f
s
t
f
Storage time
Fall Time
Storage Time
Fall Time
V
= 90V IC = 8A
CC
I
= 0.8A VBE = - 5V
B1
L
= 1µH
B
V
= 90V I
CC
I
= 0.8A VBE = - 5V
B1
L
= 1µH Tj = 125oC
B
C
= 8 A
0.6
0.04
2
0.15
V
V
ms
µs
µs
µs
µs
µs
µs
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