®
HIGH CURR ENT NPN SILICON TRANSISTOR
■ STMicroelectronics P REFE RRE D
SALESTYPE
■ NPN TRAN SISTOR
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
■ HIGH RUGGEDNESS
BUV20
APPLICATIONS
■ LINEAR AND SWITCHI NG INDUST RIAL
EQUIPMENT
■ SWITCHI NG R E GULATORS
DESCRIPTION
The BUV20 is silicon Multiepitaxial Planar NPN
1
2
TO-3
(version "S")
transistor mounted in jedec TO-3 metal case. It is
intended for use in switching and linear
applications in military and industrial equipment .
INTERNAL SCHEMAT I C DI AGRAM
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
V
V
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 160 V
CBO
Collector-Emitter Voltage (RBE = 100Ω)
CER
Collector-Emitter Voltage (VBE = -1.5V) 160 V
CEX
Collector-Emitter Voltage (IB = 0) 125 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 50 A
I
C
Collector Peak Current 60 A
CM
Base Current 10 A
I
B
Total Power Dissipation at T
tot
Storage Temperature -65 to 200
stg
Junction Temperature 200
T
j
case
≤ 25 oC
150 V
250 W
o
C
o
C
January 2000
1/4
BUV20
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 160 V
V
CE
V
= 160 V Tcase = 125 oC
CE
= 100 V 3 mA
V
CE
= 5 V 1 mA
V
EB
= 200 mA L = 25 mH 125 V
I
C
3
12
Sustaining Voltage
(I
= 0)
B
V
(BR)EB0
∗ Emitter-base
I
= 50 mA 7 V
E
Breakdown Voltage
(I
= 0)
C
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
IC = 25 A IB = 2.5 A
I
= 50 A IB = 5 A
C
0.3
0.7
0.6
1.2
IC = 50 A IB = 5 A 1.4 2 V
Saturation Voltage
h
∗ DC Current Gain VCE = 2 V IC = 25 A
FE
f
Transition frequency VCE = 15 V IC = 2 A f = 100 MHz 8 MHz
T
V
= 4 V IC = 50 A
CE
20
10
60
RESISTIVE LOAD
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %.
on
t
f
s
Turn-on Time
Fall Time
Storage Time
I
= 50 A IB1 = -IB2 = 5 A 1.5
C
0.3
1.2
mA
mA
V
V
µs
µs
µs
2/4
P003O
TO-3 (version S) MECHANICAL DATA
BUV20
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 1.47 1.60 0.058 0.063
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
3/4
BUV20
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
4/4
Loading...