SGS Thomson Microelectronics BUV20 Datasheet
®
HIGH CURR ENT NPN SILICON TRANSISTOR
■ STMicroelectronics P REFE RRE D
SALESTYPE
■ NPN TRAN SISTOR
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
■ HIGH RUGGEDNESS
BUV20
APPLICATIONS
■ LINEAR AND SWITCHI NG INDUST RIAL
EQUIPMENT
■ SWITCHI NG R E GULATORS
DESCRIPTION
The BUV20 is silicon Multiepitaxial Planar NPN
1
2
TO-3
(version "S")
transistor mounted in jedec TO-3 metal case. It is
intended for use in switching and linear
applications in military and industrial equipment .
INTERNAL SCHEMAT I C DI AGRAM
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
V
V
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 160 V
CBO
Collector-Emitter Voltage (RBE = 100Ω)
CER
Collector-Emitter Voltage (VBE = -1.5V) 160 V
CEX
Collector-Emitter Voltage (IB = 0) 125 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 50 A
I
C
Collector Peak Current 60 A
CM
Base Current 10 A
I
B
Total Power Dissipation at T
tot
Storage Temperature -65 to 200
stg
Junction Temperature 200
T
j
case
≤ 25 oC
150 V
250 W
o
C
o
C
January 2000
1/4
BUV20
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 160 V
V
CE
V
= 160 V Tcase = 125 oC
CE
= 100 V 3 mA
V
CE
= 5 V 1 mA
V
EB
= 200 mA L = 25 mH 125 V
I
C
3
12
Sustaining Voltage
(I
= 0)
B
V
(BR)EB0
∗ Emitter-base
I
= 50 mA 7 V
E
Breakdown Voltage
(I
= 0)
C
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
IC = 25 A IB = 2.5 A
I
= 50 A IB = 5 A
C
0.3
0.7
0.6
1.2
IC = 50 A IB = 5 A 1.4 2 V
Saturation Voltage
h
∗ DC Current Gain VCE = 2 V IC = 25 A
FE
f
Transition frequency VCE = 15 V IC = 2 A f = 100 MHz 8 MHz
T
V
= 4 V IC = 50 A
CE
20
10
60
RESISTIVE LOAD
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %.
on
t
f
s
Turn-on Time
Fall Time
Storage Time
I
= 50 A IB1 = -IB2 = 5 A 1.5
C
0.3
1.2
mA
mA
V
V
µs
µs
µs
2/4
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