SGS Thomson Microelectronics BUTW92 Datasheet
HIGH CURR ENT NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
APPLICATIONS:
■ MOTOR CONTROL
■ HIGH FREQUENCY AND EFFICIENCY
CONVERTERS
BUTW92
DESCRIPTION
High current, high speed transistor suited for
power conversion applications, high efficency
converters and motor controls.
ABSOL UT E MAXIMU M RATINGS
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
Symbol Parameter Value Unit
V
V
V
I
I
P
T
For PNP type voltage and current values are negative.
Collector-Emitter Voltage (VBE = 0) 500 V
CES
Collector-Emitter Voltage (IB = 0) 250 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Emitter-Current 60 A
I
E
Emitter Peak Current (tp < 5ms) 70 A
EM
Base Current 15 A
I
B
Base Peak Current (tp < 5ms) 18 A
BM
Total Dissipation at Tc ≤ 25 oC 180 W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
July 1997
o
C
o
C
1/4
BUTW92
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case MAX 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
V
CES
EBO
CES
Collector Cut-off
Current (V
= -1.5V)
BE
Emitter Cut-off Current
(I
= 0)
C
Collector-Emitter
= 450 V
V
CE
= 450 V TC = 100oC
VCE
= 5 V 50 µA
V
EB
50
1
IC = 5 mA 500 V
Breakdown Voltage
(V
=0)
EB
V
EBO
Emitter-Base
I
= 50 mA 7 V
E
Breakdown Voltage
(I
= 0)
C
V
CEO(sus)
∗ Collector-Emitter
I
= 200 mA 250 V
C
Sustaining Voltage
(I
=0)
B
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 60 A VCE = 3 V
FE
IC = 60 A IB = 15 A
I
= 60 A IB = 15 A TC = 100oC
C
IC = 60 A IB = 15 A
I
= 60 A IB = 15 A TC = 100oC
C
I
= 60 A VCE = 3 V TC = 100oC
C
I
= 5 A VCE = 3 V
C
0.8
1.1
1
1.5
1.9
2
9
6
65
RESISTIVE LOAD
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
Storage Time
Fall Time
I
= 50 A VCC = 250 V
C
I
= -IB2 = 10 A
B1
1.2
250
1.4
300
µA
mA
V
V
V
V
µs
ns
2/4
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