SGS Thomson Microelectronics BUT92 Datasheet
FAST-SWITCHING POWER TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ h
> 10 AT IC =35A
FE
■ HIGH EFFICIENCY S W ITCHI NG
■ VERY LOW SATURATION VOLTAGE
■ RECTANGULAR SAFE OPERATING AREA
■ WIDE ACCIDENTA L OVE RLO AD ARE A
BUT92
APPLICATIONS
■ UNINTERRUPTABLE POW E R SUPP LY
■ SWITCH MODE P OW ER SUP P LIE S
■ MOTOR CONTROL
1
2
TO-3
DESCRIPTION
(version "S")
The BUT92 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = -1.5 V) 350 V
CEV
Collector-Emitter Voltage (IB = 0) 250 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Emitter Current 50 A
I
E
Emitter Peak Current 75 A
EM
Base Current 10 A
I
B
Base Peak Current 15 A
BM
Total Power Dissipation at T
tot
Storage Temperature -65 to 200
stg
Junction Temperature 200
T
j
≤ 25 oC 250 W
case
o
C
o
C
June 1997
1/4
BUT92
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (R
= 10 Ω)
BE
Collector Cut-off
Current
Emitter Cut-off
Current (I
= 0)
C
∗ Collector-Emitter
= V
V
CE
VCE = V
VCE = V
V
V
CEV
Tc = 100 oC
CEV
CEV VBE
= V
CE
CEV VBE
= 7 V 1 mA
EB
= -1.5V
= -1.5V Tc = 100 oC
0.4
4
0.2
2
IC = 0.2 A L = 25 mH 250 V
Sustaining Voltage
V
EB0
Emitter-Base Voltage
IE = 50 mA 7 V
(IC = 0)
V
V
V
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
Saturation Voltage
diC/dt Rated of Rise on-state
Collector Current
∗ Collector-Emitter
CE(3µs)
Dynamic Voltage
∗ Collector-Emitter
CE(5µs)
Dynamic Voltage
IC = 35 A IB = 3.5 A
I
= 35 A IB = 3.5 A Tj = 100 oC
C
IC = 35 A IB = 3.5 A
I
= 35 A IB = 3.5 A Tj = 100 oC
C
VCC = 200V IB1 = 5.25 A RC = 0
t
3µs Tj = 100 oC
p =
VCC = 200V IB1 = 5.25 A
R
= 5.7 Ω Tj = 100 oC
C
VCC = 200V IB1 = 5.25 A
R
= 5.7 Ω Tj = 100 oC
C
0.8
1.25
1.2
1.2
1.2
1.9
1.5
1.5
125 200 A/µs
36V
1.8 3 V
mA
mA
mA
mA
V
V
V
V
INDUCTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
t
Storage Time
s
Fall Time
t
f
Crossover Time
c
V
IC = 35 A IB1 = 3.5 A
V
R
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
V
VBB = -5 V IB1 = 3.5 A
L
C
T
* Pulsed : Pulse duration = 300 µs, duty cycle = 2%
= 200 V V
CC
= -5 V LC = 0.28 mH
BB
= 0.7 Ω Tj = 100 oC
B2
= 50 V I
CC
Clamp
CWoff
= 250 V
= 52 A
= 48 µH RB2 = 0.7 Ω
= 125 oC
j
1.4
0.15
0.3
250 V
3
0.4
0.7
µs
µs
µs
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