SGS Thomson Microelectronics BUT90 Datasheet
HIGH POWER NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
■ HIGH RUGG E DN ES S
■ LOW COLLECTOR EMITTER SATURATION
BUT90
APPLICATIONS
■ UNINTERRUPTABLE PO WE R SUPP LY
■ MOTOR CONTROL
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUT90 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
ABSOL UT E MAXIMU M RATINGS
1
2
TO-3
(version "S")
INTERNAL SCHEMATIC DIAGRAM
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = -1.5 V) 200 V
CEV
Collector-Emitter Voltage (IB = 0) 125 V
CEO
Emitter-Base Voltage (IC = 0) 10 V
EBO
Collector Current 50 A
I
C
Collector Peak Current 120 A
CM
Base Current 12 A
I
B
Base Peak Current 32 A
BM
Total Power Dissipation at T
tot
Storage Temperature -65 to 200
stg
Junction Temperature 200
T
j
≤ 25 oC 250 W
case
April 1997
o
C
o
C
1/4
BUT90
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.17
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (R
= 10 Ω)
BE
Collector Cut-off
Current
Emitter Cut-off
Current (I
= 0)
C
∗ Collector-Emitter
= V
V
CE
VCE = V
VCE = V
V
V
CEV
Tc = 100 oC
CEV
CEV VBE
= V
CE
CEV VBE
= 7 V 1 mA
EB
= -1.5V
= -1.5V Tc = 100 oC
0.4
4
0.2
2
IC = 0.2 A L = 25 mH 125 V
Sustaining Voltage
V
EB0
Emitter-Base Voltage
IE = 50 mA 10 V
(IC = 0)
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
Saturation Voltage
IC = 35 A IB = 1.75 A
I
= 70 A IB = 7 A Tc = 100 oC
C
I
= 35 A IB = 1.75 A
C
I
= 70 A IB = 7 A Tc = 100 oC
C
IC = 35 A IB = 1.75 A
I
= 70 A IB = 7 A Tc = 100 oC
C
I
= 35 A IB = 1.75 A
C
I
= 70 A IB = 7 A Tc = 100 oC
C
0.55
0.8
0.75
1.2
1
1.45
1
1.65
0.9
0.9
1.2
1.5
1.3
1.8
1.4
2
RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
Rise Time
r
s
t
f
t
r
s
t
f
Storage Time
Fall Time
Rise Time
Storage Time
Fall Time
t
t
V
= 100 V IC = 70 A
CC
I
= - IB2 = 7 A tp = 30 µs
B1
V
= 100 V IC = 70 A
CC
I
= - I
B1
T
c = 100
= 7 A tp = 30 µs
B2
o
C
0.8
0.9
0.2
1.1
1.2
0.3
1.2
1.5
0.4
1.6
2
0.6
mA
mA
mA
mA
V
V
V
V
V
V
V
V
µs
µs
µs
µs
µs
µs
INDUCTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
t
* Pulsed : Pulse duration = 300 µs, duty cycle = 2%
2/4
s
t
f
s
t
f
Storage Time
Fall Time
Storage Time
Fall Time
VCC = 100 V V
Clamp
IC = 70 A IB1 = - I
L
= 70 µH
C
VCC = 100 V V
Clamp
IC = 70 A IB1 = - I
L
= 70 µH Tc = 100 oC
C
= 125 V
= 7 A
B2
= 125 V
= 7 A
B2
1.25
0.1620.3
1.5
0.25
2.2
0.5
ms
µs
µs
µs
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