SGS Thomson Microelectronics BUT70W Datasheet

®

■

STMicroelectronics PREFERRED
SALESTYPE

■

NPN TRANSISTOR

■

HIGH CURRENT CAPABILITY

■

FAST SWITCHING SPE ED

■

VERY LOW SATURATION VOLTAGE AND
HIGH GAIN

BUT70W

HIGH POWER NPN TRANSISTOR

APPLICATION

■

SWITCHING REGULATORS

■

MOTOR CONTROL

■

HIGH FREQUENCY AND EFFICENCY
CONVERTERS

TO-247

3

2

1

DESCRIPTION

The BUT70W is a Multiepitaxial planar NPN
transistor in TO-247 plastic package.

It’s intented for use in high frequency and
efficiency converters such us motor controllers

INTERNAL SCHEMATIC DIAGRAM

and industrial equipment.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V
V
V

I

E(RMS)

I

I
P
T

Collector-emitter Voltage (VBE = -1.5V) 200 V

CEV

Collector-emitter Voltage (IB = 0) 125 V

CEO

Emitter-Base Voltage (IC = 0) 7 V

EBO

Emitter Current 40 A
Emitter Peak Current 120 A

EM

Base Current 8 A

I

B

Base Peak Current 24 A

BM

Total Power Dissipation at T

tot

Storage Temperature -65 to 150

stg

Max Operating Junction Temperature 150

T

j

case

< 25 oC

200 W

o

C

o

C

February 2002

1/4

BUT70W

THERMAL DATA

R

thj-case

Thermal Resistance Junction-case Max 0.63

o

C/W

ELECTRICAL CHARACTERISTICS

= 25 oC unless otherwise specified)

(T

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CER

I

CEV

I

EBO

V

CEO(sus)

Collector Cut-off
Current (R

= 5Ω)

BE

Collector Cut-off
Current (V

= -1.5V)

BE

Emitter Cut-off
Current (I

= 0)

C

∗ Collector-Emitter

V

= 200 V

CE

V

= 200 V TC = 100oC

CE

= 200 V

V

CE

V

= 200 V TC = 100oC

CE

= 5 V 1 mA

V

EB

I

= 0.2 A L = 25 mH 125 V

C

1
5

1
4

Sustaining Voltage
(I

= 0)

B

V

(BR)EBO

Emitter-Base

I

= 50 mA 7 V

E

Breakdown Voltage
(I

= 0)

C

V

∗ Collector-Emitter

CE(sat)

Saturation Voltage

V

∗ Base-Emitter

BE(sat)

Saturation Voltage

di

∗ Rated of Rise of

c/dt

on-state Collector

= 70 A IB = 7 A

I

C

I

= 70 A IB = 7 A TC = 100oC

C

I

= 35 A IB = 1.75 A

C

I

= 35 A IB = 1.75 A TC = 100oC

C

= 70 A IB = 7 A

I

C

I

= 70 A IB = 7 A TC = 100oC

C

I

= 35 A IB = 1.75 A

C

I

= 35 A IB = 1.75 A TC = 100oC

C

V

= 100 V RC = 0 IB1 = 3.5 A

CC

= 3 µs TC = 100oC

t

p

140 A/µs

0.9

1.5

0.9

1.2

1.8

1.9

1.4

1.4

Current

∗

Pulsed: Pulse duration = 300 µs, duty cycle < 2 %

mA
mA

mA
mA

V
V
V
V

V
V
V
V

INDUCTIVE LOAD

Symbol Parameter Test Conditions Min. Typ. Max. Unit

1.8

0.2

0.35

2/4

t
t

Storage Time

s

Fall Time

t

f

Cross Over Time

c

IC = 35 A VCC = 90 V

= -5 V RB2 = 1.4 Ω

V

BB

= 1.75 A LC = 0.15 mH

Ι

B1

V

= 125V TC = 100oC

CLAMP

µs
µs
µs