SGS Thomson Microelectronics BUT32V Datasheet

NPN TRANSISTOR POWER MODULE

■ HIGH CURRENTPOWER BIPOLAR MODULE

■ VERY LOW R

■ SPECIFIEDACCIDENTAL OVERLOAD

AREAS

■ ISOLATEDCASE (2500V RMS)

■ EASY TO MOUNT

■ LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIALAPPLICATIONS:

■ MOTOR CONTROL

■ SMPS & UPS

■ DC/DC & DC/AC CONVERTERS

JUNCTION CASE

th

BUT32V

Pin 4 not connected

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

CEO(sus)

V

I

I
P
T

V

Collector-Emitter Voltage (VBE= -5 V) 400 V

CEV

Collector-Emitter Voltage (IB= 0) 300 V
Emitter-Base Voltage (IC=0) 7 V

EBO

Collector Current 80 A

I

C

Collector Peak Current (tp= 10 ms) 120 A

CM

Base Current 16 A

I

B

Base Peak Current(tp=10ms) 24 A

BM

Tota l Dissipat io n at Tc=25oC 250 W

tot

Storage Temperature -55 to 150

stg

Max. Ope ratingJunct ion Temperature 150

T

j

Insulation Withstand Voltage (AC-RMS) 2500

ISO

o

C

o

C

o

C

September1997

1/7

BUT32V

THERMAL DATA

R

thj-case

R

thc-h

Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max

0.5

0.05

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CER

I

CEV

I

EBO

V

CEO(SUS)

h

FE

V

CE(sat)

V

BE(sat)

di

C

(3 µs) Collector-Emitter

V

CE

(5 µs) Collector-Emitter

V

CE

t
t

V

CEW

∗ Pulsed:Pulseduration = 300 µs,duty cycle 1.5 %

Collector Cut-off
Curren t (R

BE

=5Ω)

Collector Cut-off
Curren t (V

BE

=-5)

Emitter Cut-off Current
(I

=0)

C

* Co lle ctor- Em it t e r

Sustaining Voltage

V

CE=VCEV

VCE=V
V

CE=VCEV

VCE=V

=5V 1 mA

V

EB

IC=0.2A L=25mH
V

= 300 V

clamp

CEV

CEV

Tj= 100oC

Tj= 100oC

300 V

∗ DC Current Gain IC=40A VCE=5V 16

∗ Collector-Emitter

Saturation Voltage

∗ Ba se -Emit ter

Saturation Voltage

/dt RateofRiseof

On-state Collector

IC=40A IB=4A
I

=40A IB=4A Tj= 100oC

C

IC=40A IB=4A
I

=40A IB=4A Tj= 100oC

C

VCC=300V RC=0 tp=3µs
I

=6A Tj= 100oC

B1

120 180 A/µs

VCC= 300 V RC=6.2Ω

Dynamic Voltage

I

=6A Tj=100oC

B1

VCC= 300 V RC=6.2Ω

Dynamic Voltage
Storage Time

s

Fall Time

t

f

Cross-over Time

c

Maximum Co lle ctor
Emitter Voltage
Withou t Snubber

I

=6A Tj=100oC

B1

I

=40A VCC= 250 V

C

V

=-5V RBB= 0.6 Ω

BB

V

= 300 V IB1=4A

clamp

L=0.3mH T
I

=60A IB1=4A

CWo f f

V

=-5V VCC=50V

BB

L=42µHR
T

=125oC

j

= 100oC

j

=0.6 Ω

BB

300 V

1
5

1
4

0.6

1.2

1.12

1.1

0.9

1.9

1.3

1.3

36V

1.8 3 V

1.9

0.12

0.35

3

0.4

0.7

mA
mA

mA
mA

V
V

V
V

µs
µs
µs

2/7

BUT32V

Safe OperatingAreas

Derating Curve

Thermal Impedance

Collector-emitter Voltage Versus
base-emitterResistance

CollectorEmitter Saturation Voltage

Base-Emitter Saturation Voltage

3/7