SGS Thomson Microelectronics BUT30V Datasheet
NPN TRANSISTOR POWER MODULE
■ NPNTRANSISTOR
■ HIGH CURRENTPOWERBIPOLARMODULE
■ VERYLOW R
■ SPECIFIEDACCIDENTAL OVERLOAD
AREAS
■ ISOLATEDCASE (2500VRMS)
■ EASY TO MOUNT
■ LOW INTERNALPARASITIC INDUCTANCE
JUNCTION CASE
th
BUT30V
APPLICATIONS:
■ MOTORCONTROL
■ SMPS& UPS
■ WELDINGEQUIPMENT
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
CEO(sus)
V
I
I
P
T
V
Collector-Emitter Voltage (VBE= -5 V) 200 V
CEV
Collector-Emitter Voltage (IB= 0) 125 V
Emitter-Base Voltage (IC=0) 7 V
EBO
Collect or Current 100 A
I
C
Collect or Peak Current (tp= 10 ms ) 150 A
CM
Base Current 20 A
I
B
Base Peak Current (tp=10ms) 30 A
BM
Total Dissipat ion at Tc=25oC 250 W
tot
Stora ge T emperature -55 to 150
stg
Max. Oper at i ng Junction Temperature 150
T
j
Insul at ion Withst and Voltage (A C-RMS) 2500 V
ISO
o
C
o
C
July 1997
1/7
BUT30V
THERMAL DATA
R
thj-case
R
thc-h
Ther mal Resistance Junct ion- c ase Max
Ther mal Resistance Case-heatsink With C onductive
Gr ease Applied Max
0.5
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(SUS)
Collector C ut -off
Current (R
BE
=5Ω)
Collector C ut -off
Current (V
BE
=-5V)
Emit ter Cut-of f C urr ent
=0)
(I
C
* Collector-Emitter
Sust aining V oltage
∗ DC Cur rent Gain IC=100A VCE=5V 27
h
FE
V
∗ Collector-Emit t er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
di
/dt Rate of Rise of
C
On-stat e Collector
(3 µs)•• Collector-Emitter
V
CE
Dynamic Volt age
(5 µs)••Collector-Em itter
V
CE
Dynamic Volt age
t
t
V
CEW
St orage Time
s
Fall T ime
t
f
Cross-over Time
c
Maximum Collector
Emit ter Voltage
Wit hout S nubber
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
V
CE=VCEV
VCE=V
V
CE=VCEV
VCE=V
V
=5V 1 mA
EB
IC=0.2A L=25mH
= 125 V
V
clamp
IC=50A IB=2.5A
=50A IB=2.5A Tj=100oC
I
C
I
=100A IB=10A
C
=100A IB=10A Tj=100oC
I
C
IC=50A IB=2.5A
=50A IB=2.5A Tj=100oC
I
C
=100A IB=10A
I
C
=100A IB=10A Tj=100oC
I
C
VCC=300V RC=0 tp=3µs
=15A Tj=100oC
I
B1
VCC=300V RC=1Ω
I
=15A Tj=100oC
B1
VCC=300V RC=1Ω
=15A Tj=100oC
I
B1
IC=100A VCC=90V
V
=-5V RBB=0.47Ω
BB
= 125 V IB1=10A
V
clamp
L=45µHT
I
=150A IB1=10A
CWo f f
=-5V VCC=90V
V
BB
L=30µHR
= 125oC
T
j
CEV
CEV
Tj=100oC
Tj=100oC
=100oC
j
=0.5Ω
BB
125 V
0.45
0.55
0.7
0.9
1.15
1.1
1.45
1.55
270 350 A/µs
2.7 3.5 V
22.5V
1
0.1
0.2
125 V
1
5
1
4
0.9
1.2
0.9
1.5
1.4
1.4
1.8
1.9
2
0.2
0.35
mA
mA
mA
mA
V
V
V
V
V
V
V
V
µs
µs
µs
2/7
BUT30V
Safe Operating Areas
Derating Curve
ThermalImpedance
Collector-emitter Voltage Versus
base-emitterResistance
CollectorEmitter SaturationVoltage
Base-EmitterSaturationVoltage
3/7
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