SGS Thomson Microelectronics BUT11A Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ FAST SWITCHING SPEED
APPLICATIONS:
■ FLYBACK AND FORW ARD S INGLE
TRANSI ST OR LOW POW ER CO NV ERT E RS
DESCRIPTION
The BUT11A is a silicon multiepitaxial mesa NPN
transistor in Jedec TO-220 plastic package,
particularly intended for switching application.
BUT11A
NPN POWER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
June 1997
Collector-Emitter Voltage (VBE = 0 V) 1000 V
CES
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
I
Collector Current 5 A
C
Collector Peak Current 10 A
CM
I
Base Current 2 A
B
Base Peak Current 4 A
BM
Total Power Dissipation at Tc ≤ 25 oC83W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
1/4
BUT11A
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)*
Collector Cut-off
Current (V
BE
= 0)
= rated V
V
CE
at T
case
CES
= 125oC
1
2
Emitter Cut-off Current IC = 0 VBE = 9 V 10 mA
Collector-emitter
I
= 0 IC = 100 mA 450 V
B (off)
Sustaining Voltage
V
CE(sat)*
Collector-emitter
IC = 2.5 A IB = 0.5 A 1.5 V
Saturation Voltage
V
BE(sat)*
Base-emitter
IC = 2.5 A IB = 0.5 A 1.3 V
Saturation Voltage
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Turn on Time IC = 2.5 A VCC = 250 V
on
Storage Time 4 µs
s
t
Fall Time 0.8 µs
f
I
B
= I
= 0.5 A
B2
1 µs
mA
mA
2/4
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