SGS Thomson Microelectronics BUT100 Datasheet
HIGH POWER NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
■ HIGH RUGG E DN ES S
APPLICATION
■ MOTOR CONTROL
■ UNINTERRUPTAB LE POWE R SUP PLY
DESCRIPTION
The BUT100 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
BUT100
1
2
TO-3
(version " S ")
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = -1.5V) 200 V
CEV
Collector-Emitter Voltage (IB = 0) 125 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Emitter Current 50 A
I
E
Emitter Peak Current 150 A
EM
Base Current 10 A
I
B
Base Peak Current 30 A
BM
Total Dissipation at Tc < 25 oC 300 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
April 1997
1/4
BUT100
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.58
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(sus)
V
V
CE(sat)
V
BE(sat)
di
EBO
c
Collector Cut-off
Current (R
= 5Ω)
BE
Collector Cut-off
Current
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
Saturation Voltage
/dt Rate of Rise of
on-state Collector
= V
V
CE
V
VCE = V
V
V
IC = 0.2 A
CEV
= V
CE
CEV TC
CEV VBE
= V
CE
CEV VBE
= 5 V 1 mA
EB
= 100oC
= -1.5V
= -1.5V TC = 100oC
125 V
1
5
1
4
L = 25mH
= 50mA 7 V
I
E
IC = 50A IB = 2.5A
I
= 100A IB = 10A
C
I
= 50A IB = 2.5A Tj = 100oC
C
I
= 100A IB = 10A Tj = 100oC
C
IC = 50A IB = 2.5A
I
= 100A IB = 10A
C
I
= 50A IB = 2.5A Tj = 100oC
C
I
= 100A IB = 10A Tj = 100oC
C
V
= 100V RC = 0 IB1 = 5A
CC
T
= 3µs Tj = 100oC
p
180 A/µs
0.9
0.9
1.2
1.5
1.4
2
1.4
2.1
Current
INDUCTIVE LOAD
s
t
f
c
Storage time
Fall Time
Crossover Time
t
t
V
= 90V V
CC
I
= 50A IB1 = 2.5A
C
V
= - 5V LC = 80µH
BB
R
= 1 Ω Tj = 100oC
B2
clamp
= 125 V
2
0.2
0.35
mA
mA
mA
mA
V
V
V
V
V
V
V
V
µs
µs
µs
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
∗ Pulsed: Pulse duration = 3µs, duty cycle = 2 %
2/4
V
= 90V I
CC
= - 5V IB1 = 10A
VBB
L
= 30µH RB2 = 1Ω
C
T
= 125oC
j
CWoff =
150A
125 V
Loading...