SGS Thomson Microelectronics BUR51 Datasheet
HIGH CURR ENT NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
DESCRIPTION
The BUR51 is a silicon multiepitaxial planar NPN
transistor in modified Jedec TO-3 metal case,
intented for use in switching and linear
applications in military and industrial equipment.
BUR51
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 300 V
CBO
Collector-Emitter Voltage (IB = 0) 200 V
CEO
Emitter-Base Voltage (IC = 0) 10 V
EBO
Collector Current 60 A
I
C
Collector Peak Current (tp = 10 ms) 80 A
CM
Base Current 16 A
I
B
Total Dissipation at Tc ≤ 25 oC 350 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
June 1997
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BUR51
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 300 V
V
CB
V
= 300 V T
CB
=200 V 1 mA
V
CE
= 7 V
V
EB
case
= 125 oC
0.2
2
0.2 µA
IC = 200 mA 200 V
Sustaining Voltage
V
V
CE(sat)
V
BE(sat)
h
EBO
FE
I
s/b
Emitter-base Voltage
(I
= 0)
C
∗ Collector-emitter
Saturation Voltage
∗ Base-emitter
Saturation Voltage
= 10 mA 10 V
I
E
IC = 30 A IB = 2 A
I
= 50 A IB = 5 A 0.9
C
IC = 30 A IB = 2 A
I
= 50 A IB = 5 A 1.55
C
∗ DC Current Gain IC = 5 A VCE = 4 V
I
= 50 A VCE = 4 V
C
Second Breakdown
VCE = 20 V t = 1 s 17.5 A
20
15
1
1.5
1.8
2
100
Collector Current
f
Transition-Frequency IC = 1 A VCE = 5 V
T
10 16 MHz
f = 1 MHz
t
t
Turn-on Time IC = 50 A IB1 = 5 A
on
Storage Time IC = 50 A IB1 = 5 A
s
t
Fall Time 0.24 0.6 µs
f
Clamped E
Collector
s/b
V
= 100 V
CC
I
= -5 A VCC = 100 V
B2
V
= 200 V L = 500 µH 50 A
clamp
0.35 1 µs
0.9 2 µs
Current
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
mA
mA
V
V
V
V
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