SGS Thomson Microelectronics BULT118D Datasheet

HIGH VOLTAGE FAST-SWITCHING
NPNTRANSISTOR
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTERDIODE
HIGH VOLTAGECAPABILITY
LOW SPREADOF DYNAMIC PARAMETERS
RELIABLEOPERATION
VERYHIGH SWITCHINGSPEED
APPLICATIONS:
ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
FLYBACKAND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switchingspeeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintainingthe wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
BULT118D
NPN POWER TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V V V
I
I P
T
June 1997
Collector-Emitter Voltage (VBE= 0) 700 V
CES
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 2 A
I
C
Collect or Peak Current (tp<5ms) 4 A
CM
Base Current 1 A
I
B
Base Peak Current (tp<5ms) 2 A
BM
Total Dissipat ion at Tc=25oC45W
tot
Stora ge T emperature -65 to 150
stg
Max. Oper at i ng Junction T emperature 150
T
j
o
C
o
C
1/7
BULT118D
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance J u nc tion-Case Max Thermal Resistance Junction-Ambient Max
2.77 80
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CES
V
EBO
V
CEO(sus)
Collector Cut-off Current (V
BE
=0)
=700V
V
CE
V
=700V Tj=125oC
CE
100
500 Emitt er-Base V oltage IE=10mA 9 V Collector-Em it t er
IC= 100 mA L = 25 mH 400 V
Sust aining Voltage
I
CEO
Collector-Em it t er
VCE=400V 250 µA
Leakage Curren t
V
Collector-Em it t er
CE(sat)
Saturation Voltage
V
Base-Emitt er
BE(sat)
Saturation Voltage
h
DC C urr ent Gain IC=10mA VCE=5V
FE
IC=0.5A IB=0.1A
=1A IB=0.2A
I
C
=2A IB=0.4A
I
C
IC=0.5A IB=0.1A
=1A IB=0.2A
I
C
I
=2A IB=0.4A
C
=0.5A VCE=5V
I
C
=2A VCE=5V
I
C
10 10
8
0.5 1
1.5
1.0
1.2
1.3
50
RESI STIVE LO AD
t
Rise Tim e
r
t
s
t
f
St orage Time Fall T ime
INDUCTIV E LOAD
t
Pulsed: Pulse duration = 300 µs,duty cycle1.5 %
s
t
f
St orage Time Fall T ime
V
=125 V IC=1A
CC
=0.2A IB2=-0.2A
I
B1
IC=1A IB1=0.2A
=-5V L=50mH
V
BE
V
clamp
= 300 V
0.4
3.2
0.25
0.8
0.16
0.7
4.5
0.4
µA µA
V V V
V V V
µs µs µs
µs µs
2/7
BULT118D
Safe Operating Areas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitterSaturationVoltage
BaseEmitter Saturation Voltage
3/7
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