SGS Thomson Microelectronics BULT118D Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ NPNTRANSISTOR
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTERDIODE
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMIC PARAMETERS
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
APPLICATIONS:
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ FLYBACKAND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switchingspeeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
BULT118D
NPN POWER TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
June 1997
Collector-Emitter Voltage (VBE= 0) 700 V
CES
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 2 A
I
C
Collect or Peak Current (tp<5ms) 4 A
CM
Base Current 1 A
I
B
Base Peak Current (tp<5ms) 2 A
BM
Total Dissipat ion at Tc=25oC45W
tot
Stora ge T emperature -65 to 150
stg
Max. Oper at i ng Junction T emperature 150
T
j
o
C
o
C
1/7
BULT118D
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance J u nc tion-Case Max
Thermal Resistance Junction-Ambient Max
2.77
80
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CES
V
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
=0)
=700V
V
CE
V
=700V Tj=125oC
CE
100
500
Emitt er-Base V oltage IE=10mA 9 V
Collector-Em it t er
IC= 100 mA L = 25 mH 400 V
Sust aining Voltage
I
CEO
Collector-Em it t er
VCE=400V 250 µA
Leakage Curren t
V
∗ Collector-Em it t er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=10mA VCE=5V
FE
IC=0.5A IB=0.1A
=1A IB=0.2A
I
C
=2A IB=0.4A
I
C
IC=0.5A IB=0.1A
=1A IB=0.2A
I
C
I
=2A IB=0.4A
C
=0.5A VCE=5V
I
C
=2A VCE=5V
I
C
10
10
8
0.5
1
1.5
1.0
1.2
1.3
50
RESI STIVE LO AD
t
Rise Tim e
r
t
s
t
f
St orage Time
Fall T ime
INDUCTIV E LOAD
t
∗
Pulsed: Pulse duration = 300 µs,duty cycle1.5 %
s
t
f
St orage Time
Fall T ime
V
=125 V IC=1A
CC
=0.2A IB2=-0.2A
I
B1
IC=1A IB1=0.2A
=-5V L=50mH
V
BE
V
clamp
= 300 V
0.4
3.2
0.25
0.8
0.16
0.7
4.5
0.4
µA
µA
V
V
V
V
V
V
µs
µs
µs
µs
µs
2/7
BULT118D
Safe Operating Areas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitterSaturationVoltage
BaseEmitter Saturation Voltage
3/7
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