SGS Thomson Microelectronics BULT118 Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics PREFERRED
SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGECAPABILITY
■ LOW SPREADOF DYNAMIC PARAMETERS
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
APPLICATIONS:
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ FLYBACKAND FORWARDSINGLE
TRANSISTOR LOWPOWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switchingspeeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
BULT118
NPN POWER TRANSISTORS
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
June 2000
Collector-Emitter V oltage (VBE= 0) 700 V
CES
Collector-Emitter V oltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 2 A
I
C
Collect or Peak Cu rr ent (tp<5ms) 4 A
CM
Base Current 1 A
I
B
Base P eak Current (tp<5ms) 2 A
BM
Total Dissipation at Tc=25oC45W
tot
Stora ge Temperat u re -65 t o 150
stg
Max. O p er at i ng J unct ion T emperature 150
T
j
o
C
o
C
1/7
BULT118
THERMAL DATA
R
thj-case
R
thj- amb
Ther mal Resistance Junct ion-Case Max
Thermal Resistance Junction-Ambient Max
2.77
80
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CES
V
V
CEO(sus )
Collector Cut-of f
Current (V
EBO
Emitt er-Base Voltage IE=10mA 9 V
∗ Co llec tor-Emitt er
BE
=0)
V
=700V
CE
=700V Tj=125oC
V
CE
I
= 100 mA L = 25 mH 400 V
C
100
500
Sust aining Voltag e
=0)
(I
B
I
CEO
Collector-Emitt er
VCE=400V 250 µA
Leakage Current
V
∗ Collector-E mitt er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat )
Saturation Voltage
h
∗ DC Curr ent Gain IC=10mA VCE=5V
FE
IC=0.5A IB=0.1A
=1A IB=0.2A
I
C
=2A IB=0.4A
I
C
IC=0.5A IB=0.1A
=1A IB=0.2A
I
C
=2A IB=0.4A
I
C
I
=0.5A VCE=5V
C
=2A VCE=5V
I
C
10
10
8
0.5
1
1.5
1.0
1.2
1.3
50
RESI STIVE LOAD
t
Rise Time
r
t
s
t
f
St orage Time
Fall Time
INDUCTIVE LO AD
t
∗ Pulsed: Pulse duration =300 ms, duty cycle 1.5 %
s
t
f
St orage Time
Fall Time
V
I
B1
IC=1A IB1=0.2A
V
V
=125 V IC=1A
CC
=0.2A IB2=-0.2A
=-5V L=50mH
BE
= 300 V
clamp
0.4
3.2
0.25
0.8
0.16
0.7
4.5
0.4
µA
µA
V
V
V
V
V
V
µs
µs
µs
µs
µs
2/7
BULT118
Safe OperatingAreas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitter SaturationVoltage
BaseEmitter Saturation Voltage
3/7
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