®
MEDIUM VOLTAGE FAST-SWITCHING
■ INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT- TO- LO T SPR E AD FO R
RELIABLE OPERATION
■ VERY H IGH SWITCHING SPEED
APPLICATIONS:
■ COMPACT FLUO RES CENT LAMPS UP T O
23 W AT 110 V A.C. MAINS
■ FLYBACK AND FOR WARD S INGLE
TRANSI ST OR LOW POWER CO N V ERT E RS
AT 110 V A.C. MAINS
DESCRIPTION
The device is manufactured using Multi Epitaxial
Planar technology for high switching speeds and
medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
BULT116D
NPN POWER TRANSISTOR
PRELIMINARY DATA
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
February 2003
Collector-Emitter Voltage (VBE = 0) 400 V
CES
Collector-Emitter Voltage (IB = 0) 200 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Current 5 A
I
C
Collector Peak Current (tp < 5 ms) 10 A
CM
Base Current 2 A
I
B
Base Peak Current (tp < 5 ms) 4 A
BM
Total Dissipation at Tc = 25 oC45W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
1/6
BULT116D
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
2.78
80
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
V
V
CEO(sus)
EBO
Collector Cut-off
Current (V
BE
= 0)
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
= 400 V
V
CE
V
= 400 V Tc = 125 oC
CE
= 10 mA 9 V
I
E
I
= 100 mA 200 V
C
100
500
Sustaining Voltage
(I
= 0)
B
I
V
CE(sat)
CEO
Collector Cut-off
Current (I
= 0)
B
∗ Collector-Emitter
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 10 mA VCE = 5 V
FE
RESISTIVE LOAD
Rise Time
t
r
Fall Time
t
f
t
Storage Time
s
INDUCTIVE LOAD
t
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Time
s
Fall Time
t
f
Diode Forward Voltage IC = 2 A 1.5 V
F
= 200 V 250 µA
V
CE
IC = 0.5 A IB = 50 mA
I
= 1 A IB = 0.1 A
C
I
= 3 A IB = 0.6 A
C
I
= 5 A IB = 1 A
C
IC = 1 A IB = 0.1 A
I
= 5 A IB = 1 A
C
0.25
0.4
0.7
1.2
1.1
1.5
10
I
= 5 A VCE = 5 V
C
V
= 125 V IC = 2 A
CC
I
= 0.4 A IB2 = -0.4 A
B1
= 30 µs (see figure 2)
t
p
820
0.2
0.2
0.4
1.4
IC = 2 A IB1 = 0.4 A
= -5 V L = 500 µH
V
BE
V
= 180 V (see figure 1)
clamp
0.5
0.1
µA
µA
V
V
V
V
V
V
µs
µs
µs
µs
µs
Safe Operating Are a Derating Curve
2/6
BULT116D
DC Current Gain
Collector-Em itter Sat uration Volt a ge
DC Current Gain
Base-Emitter Saturation Voltage
Switching Time Resistive Load
Switching Time Inductive Load
3/6
BULT116D
Reverse B iased SOA
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
4/6
SOT- 32 (TO-12 6) MECHANICAL DATA
1: Base
2: Collector
3: Emitter
BULT116D
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.425
b 0.7 0.9 0.028 0.035
b1 0.40 0.65 0.015 0.025
C 2.4 2.7 0.094 0.106
c1 1.0 1.3 0.039 0.051
D 15.4 16.0 0.606 0.630
e 2.2 0.087
e3 4.4 0.173
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
I 1.27 0.05
O 0.3 0.011
V10
mm inch
o
10
o
0016114/B
5/6
BULT116D
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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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