SGS Thomson Microelectronics BULK128D-B Datasheet

HIGH VOLTAGE FAST-SWITCHING

■ SGS-THOMSONPREFERRED SALESTYPE

■ ORDERING CODES : BULK128D-A AND

BULK128D-B

■ NPNTRANSISTOR

■ HIGH VOLTAGECAPABILITY

■ LOW SPREADOF DYNAMICPARAMETERS

■ MINIMUMLOT-TO-LOT SPREADFOR

RELIABLEOPERATION

■ VERYHIGH SWITCHINGSPEED

APPLICATIONS:

■ ELECTRONICBALLASTSFOR

FLUORESCENT LIGHTING

■ FLYBACKAND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switchingspeeds and medium voltage capability.

It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.

The device is designed for use in lighting
applications and low cost switch-mode power
supplies.

BULK128D

NPN POWER TRANSISTOR

3

2

1

SOT-82

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parame t er Val u e Uni t

V
V
V

I

I
P

T

December 1997

Collector-Emitter Voltage (VBE= 0) 700 V

CES

Collector-Emitter Voltage (IB= 0) 400 V

CEO

Emitter-Base Voltage (IC=0) 9 V

EBO

Collect or Current 4 A

I

C

Collect or Peak Current ( tp<5ms) 8 A

CM

Base Current 2 A

I

B

Base Peak Current (tp<5ms) 4 A

BM

Total Dissipat ion at Tc=25oC55W

tot

Stora ge T emperature -65 to 150

stg

Max. Oper at i ng Junct i on T emperat u re 150

T

j

o

C

o

C

1/7

BULK128D

THERMAL DATA

R

thj-case

R

thj- amb

Ther mal Resistance Junc tion-Case Max
Thermal Resistance Junction-Ambient Max

2.27
80

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

I

I

CES

CEO

Collector C ut -off
Current (V

=-1.5V)

BE

Collector-E mitt er

=700V

V

CE

V

=700V Tj=125oC

CE

V

=400V 250 µA

CE

100
500

Leakage Current

=0)

(I

B

V

EBO

V

CEO(sus)

Emitt er-Base V oltage IE=10mA 9 V
Collector-E mitt er

IC= 100 mA L = 25 mH 400 V

Sust aining Volt age

V

∗ Collector- Emitt er

CE(sat)

Saturation Voltage

V

∗ Base-Emitt er

BE(sat )

Saturation Voltage

h

∗ DC C urr ent Gain IC=10mA VCE=5V

FE

V

For ward Voltag e Dro p If=2 A 2.5 V

f

RESI STIVE LO AD

t

s

St orage Time
BULK128D-A
BULK128D-B

t

Fall T ime

f

INDUCTI V E LOA D

t

s

t

f

St orage Time

Fall Time

IC=0.5A IB=0.1A

=1A IB=0.2A

I

C

=2.5A IB=0.5A

I

C

IC=0.5A IB=0.1A
I

=1A IB=0.2A

C

=2.5A IB=0.5A

I

C

=2A VCE=5V

I

C

VCC=250V IC=2A

=0.4A IB2=-0.4A

I

B1

=30µs

T

p

(see f ig. 2 )

VCl=200 V IC=2A

=0.4A V

I

B1

=0Ω L=200 µH

R

BB

BE(of f)

=-5V

10

8

1.7

2.0

0.2

0.6

0.1

0.7

1.0

1.5

1.1

1.2

1.3

2.5

2.9

(see f ig. 1 )

∗

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

µA
µA

V
V
V

V
V
V

µs
µs
µs

µs
µs

Note: Ordering codes:

- BULK128D-A

- BULK128D-B.
Please contact your nearest ST Microelectronics sales office for delivery details.

2/7

BULK128D

Safe Operating Areas

DCCurrent Gain

DeratingCurve

DC Current Gain

CollectorEmitter SaturationVoltage

BaseEmitter Saturation Voltage

3/7