SGS Thomson Microelectronics BULB39D Datasheet
®
HIGH VOLTAGE FAST-SWITCHING
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ MINIMUM LOT-TO-LOT SPREAD FOR
RELIAB LE OP ERA T ION
■ VERY HIGH SWITCHING SPEED
■ HIGH RUGGEDNESS
■ SURFACE-MOUNTING D
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
APPLICATIONS
■ ELECTRO NI C TRAN S FOR ME RS F OR
HALOG EN LA MP S
■ SWITCH MODE PO W E R S UPP LIES
DESCRIPTION
The BULB39D is manufactured using high
voltage Multi Epitaxial Planar technology to
enhance switching speeds while maintaining wide
RBSOA.
The BUL series is designed for use in electronics
transformers f or halogen lamps.
2
PAK (TO-263)
BULB39D
NPN POW ER TRANSISTOR
3
1
D2PAK
(TO-263)
(Suffix "T4")
INTERNAL SCHEMAT I C DIAGRAM
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
August 2001
Collector-Emitter Voltage (VBE = 0) 850 V
CES
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Current 4 A
I
C
Collector Peak Current (tp <5 ms) 8 A
CM
Base Current 2 A
I
B
Base Peak Current (tp <5 ms) 4 A
BM
Total Dissipation at Tc = 25 oC70W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
1/6
BULB39D
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.78
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 850 V
V
CE
V
= 850 V Tj = 125 oC
CE
= 9 V 100 µA
V
EB
I
= 100 mA L = 25 mH 450 V
C
100
500
Sustaining Voltage
(I
= 0)
B
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
hFE∗ DC Current Gain IC = 5 A VCE = 10 V
V
CEW
Maximum Collector
Emitter Voltage
Without Snubber
INDUCTIVE LOAD
t
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Time
s
Fall Time
t
f
Diode Forward Voltage IC = 2 A 1.5 V
f
IC = 1 A IB = 0.2 A
I
= 2.5 A IB = 0.5 A
C
IC = 1 A IB = 0.2 A
I
= 2.5 A IB = 0.5 A
C
I
= 10 mA VCE = 5 V
C
I
= 6 A R
C
= -2.5 V L = 50µH
V
BB
= 10 µs
t
p
I
= 2.5 A I
C
V
V
= -5 V R
BE(off)
= 300 V L = 1 mH
CL
BB
B(on)
BB
= 0 Ω
= 0.5 A
= 0 Ω
0.13 0.5
1.1
1.1
1.3
4
10
450 V
0.7
50
1.5
100
µA
µA
V
V
V
V
µs
ns
2/6
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