SGS Thomson Microelectronics BULB39D Datasheet

®
HIGH VOLTAGE FAST-SWITCHING
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIAB LE OP ERA T ION
VERY HIGH SWITCHING SPEED
SURFACE-MOUNTING D
POWER PACKAGE IN TAPE & REEL (Suffix "T4")
APPLICATIONS
ELECTRO NI C TRAN S FOR ME RS F OR
HALOG EN LA MP S
SWITCH MODE PO W E R S UPP LIES
DESCRIPTION
The BULB39D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining wide RBSOA.
The BUL series is designed for use in electronics transformers f or halogen lamps.
2
PAK (TO-263)
BULB39D
NPN POW ER TRANSISTOR
3
1
D2PAK
(TO-263)
(Suffix "T4")
INTERNAL SCHEMAT I C DIAGRAM
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
V V V
I
I P
T
August 2001
Collector-Emitter Voltage (VBE = 0) 850 V
CES
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Current 4 A
I
C
Collector Peak Current (tp <5 ms) 8 A
CM
Base Current 2 A
I
B
Base Peak Current (tp <5 ms) 4 A
BM
Total Dissipation at Tc = 25 oC70W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
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BULB39D
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max
1.78 70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collector Cut-off Current (V
BE
= 0)
Emitter Cut-off Current (I
= 0)
C
Collector-Emitter
= 850 V
V
CE
V
= 850 V Tj = 125 oC
CE
= 9 V 100 µA
V
EB
I
= 100 mA L = 25 mH 450 V
C
100 500
Sustaining Voltage (I
= 0)
B
V
Collector-Emitter
CE(sat)
Saturation Voltage
V
Base-Emitter
BE(sat)
Saturation Voltage
hFE∗ DC Current Gain IC = 5 A VCE = 10 V
V
CEW
Maximum Collector Emitter Voltage Without Snubber
INDUCTIVE LOAD
t
V
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Time
s
Fall Time
t
f
Diode Forward Voltage IC = 2 A 1.5 V
f
IC = 1 A IB = 0.2 A I
= 2.5 A IB = 0.5 A
C
IC = 1 A IB = 0.2 A I
= 2.5 A IB = 0.5 A
C
I
= 10 mA VCE = 5 V
C
I
= 6 A R
C
= -2.5 V L = 50µH
V
BB
= 10 µs
t
p
I
= 2.5 A I
C
V V
= -5 V R
BE(off)
= 300 V L = 1 mH
CL
BB
B(on)
BB
= 0
= 0.5 A
= 0
0.13 0.5
1.1
1.1
1.3
4
10
450 V
0.7 50
1.5
100
µA µA
V V
V V
µs ns
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