®
HIGH VOLTAGE FAST-SWITCHING
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ MINIMUM LOT-TO-LOT SPREAD FOR
RELIAB LE OP ERA T ION
■ VERY HIGH SWITCHING SPEED
■ HIGH RUGGEDNESS
■ SURFACE-MOUNTING D
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
APPLICATIONS
■ ELECTRO NI C TRAN S FOR ME RS F OR
HALOG EN LA MP S
■ SWITCH MODE PO W E R S UPP LIES
DESCRIPTION
The BULB39D is manufactured using high
voltage Multi Epitaxial Planar technology to
enhance switching speeds while maintaining wide
RBSOA.
The BUL series is designed for use in electronics
transformers f or halogen lamps.
2
PAK (TO-263)
BULB39D
NPN POW ER TRANSISTOR
3
1
D2PAK
(TO-263)
(Suffix "T4")
INTERNAL SCHEMAT I C DIAGRAM
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
August 2001
Collector-Emitter Voltage (VBE = 0) 850 V
CES
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Current 4 A
I
C
Collector Peak Current (tp <5 ms) 8 A
CM
Base Current 2 A
I
B
Base Peak Current (tp <5 ms) 4 A
BM
Total Dissipation at Tc = 25 oC70W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
1/6
BULB39D
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.78
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 850 V
V
CE
V
= 850 V Tj = 125 oC
CE
= 9 V 100 µA
V
EB
I
= 100 mA L = 25 mH 450 V
C
100
500
Sustaining Voltage
(I
= 0)
B
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
hFE∗ DC Current Gain IC = 5 A VCE = 10 V
V
CEW
Maximum Collector
Emitter Voltage
Without Snubber
INDUCTIVE LOAD
t
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Time
s
Fall Time
t
f
Diode Forward Voltage IC = 2 A 1.5 V
f
IC = 1 A IB = 0.2 A
I
= 2.5 A IB = 0.5 A
C
IC = 1 A IB = 0.2 A
I
= 2.5 A IB = 0.5 A
C
I
= 10 mA VCE = 5 V
C
I
= 6 A R
C
= -2.5 V L = 50µH
V
BB
= 10 µs
t
p
I
= 2.5 A I
C
V
V
= -5 V R
BE(off)
= 300 V L = 1 mH
CL
BB
B(on)
BB
= 0 Ω
= 0.5 A
= 0 Ω
0.13 0.5
1.1
1.1
1.3
4
10
450 V
0.7
50
1.5
100
µA
µA
V
V
V
V
µs
ns
2/6
BULB39D
Safe Operating A reas
DC Current Gain
Derating Curve
DC Current Gain
Collector Emitt er Sat uration Volt a ge
Base Emitt er Sat urat ion Volt age
3/6
BULB39D
Inductive Fall Time
Reverse Biased SOA
Inductive Storage Time
4/6
TO-263 (D2PAK) MECHANICAL DATA
BULB39D
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.036
B2 1.14 1.70 0.044 0.067
C 0.45 0.60 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8.00 0.315
E 10.00 10.40 0.393 0.409
E1 8.50 0.334
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.40 1.75 0.055 0.068
M 2.40 3.2 0.094 0.126
R 0.40 0.016
V2 0
o
o
8
o
0
o
8
- Weight : 1.38 g (typ.)
- The planaty of the slug must be within 30 µm
P011P6/G
5/6
BULB39D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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