SGS Thomson Microelectronics BUL89 Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ HIGHVOLTAGECAPABILITY
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ LOW BASE-DRIVE REQUIREMENTS
■ VERYHIGH SWITCHING SPEED
■ FULLYCHARACTERIZED AT 125
APPLICATIONS
■ ELECTRONIC TRANSFORMER FOR
HALOGENLAMPS
■ SWITCHMODE POWER SUPPLIES
o
C
BUL89
NPN POWER TRANSISTOR
3
2
1
DESCRIPTION
TO-220
The BUL89 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structureto enhance switchingspeeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
INTERNAL SCHEMATIC DIAGRAM
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collect or- E m itter Vol ta ge (VBE= 0) 850 V
CES
Collect or- E m itter Vol ta ge (IB= 0) 400 V
CEO
Emitter-Base Volt a ge ( IC=0) 9 V
EBO
Collect or Current 12 A
I
C
Collect or Peak C ur rent ( tp<5ms) 25 A
CM
Base Current 6 A
I
B
Base Peak Cu r rent (tp<5ms) 12 A
BM
Total Dissipation at Tc=25oC 110 W
tot
Stora ge T em per at u re -65 t o 150
stg
Max. O perating Junction Temperature 150
T
j
o
C
o
C
January 2000
1/6
BUL89
THERMAL DATA
R
thj-case
Ther mal Resistance Junction-Case Max 1.14
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collec t or Cut -of f
Current (V
BE
=0)
Collec t or Cut -of f
Current (I
B
=0)
∗ Collec t or- Emitter
V
=850V
CE
=850V Tj= 125oC
V
CE
V
=400V 100 µA
CE
I
=10mA L=25mH 400 V
C
100
500
Sust aining Volta ge
=0)
(I
B
V
V
CE(sat)
EBO
Emitter-Base Voltage
=0)
(I
C
∗ Collec t or -Emitter
Sat uration Vol t age
V
∗ Base-Emitt er
BE(sat )
Sat uration Vol t age
h
∗ DC C ur rent Gain IC=5A VCE=5V
FE
INDUCTI VE LO AD
t
s
t
f
St orage Tim e
Fall Time
INDUCTI VE LO AD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
St orage Tim e
Fall Time
I
=10mA 9 V
E
IC=5A IB=1A
=8A IB=1.6A
I
C
=12A IB=2.4A
I
C
IC=5A IB=1A
=8A IB=1.6A
I
C
=10mA VCE=5V
I
C
10
10
1
1.5
5
1.3
1.6
40
IC=8A IB1=1.6A
V
V
=-5V RBB=0Ω
BE(off)
= 350 V L = 200 µH
CL
1.5
55
2.3
110
IC=8A IB1=1.6 A
V
V
T
=-5V RBB=0Ω
BE(off)
= 350 V L = 200 µH
CL
= 100oC
j
1.9
80
µA
µA
V
V
V
V
V
µs
ns
µs
ns
SafeOperating Area DeratingCurve
2/6
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