HIGH VOLTAGE FAST-SWITCHING
■ HIGHVOLTAGECAPABILITY
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ LOW BASE-DRIVE REQUIREMENTS
■ VERYHIGH SWITCHING SPEED
■ FULLYCHARACTERIZED AT 125
APPLICATIONS
■ ELECTRONIC TRANSFORMER FOR
HALOGENLAMPS
■ SWITCHMODE POWER SUPPLIES
o
C
BUL89
NPN POWER TRANSISTOR
3
2
1
DESCRIPTION
TO-220
The BUL89 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structureto enhance switchingspeeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
INTERNAL SCHEMATIC DIAGRAM
supplies.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collect or- E m itter Vol ta ge (VBE= 0) 850 V
CES
Collect or- E m itter Vol ta ge (IB= 0) 400 V
CEO
Emitter-Base Volt a ge ( IC=0) 9 V
EBO
Collect or Current 12 A
I
C
Collect or Peak C ur rent ( tp<5ms) 25 A
CM
Base Current 6 A
I
B
Base Peak Cu r rent (tp<5ms) 12 A
BM
Total Dissipation at Tc=25oC 110 W
tot
Stora ge T em per at u re -65 t o 150
stg
Max. O perating Junction Temperature 150
T
j
o
C
o
C
January 2000
1/6
BUL89
THERMAL DATA
R
thj-case
Ther mal Resistance Junction-Case Max 1.14
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collec t or Cut -of f
Current (V
BE
=0)
Collec t or Cut -of f
Current (I
B
=0)
∗ Collec t or- Emitter
V
=850V
CE
=850V Tj= 125oC
V
CE
V
=400V 100 µA
CE
I
=10mA L=25mH 400 V
C
100
500
Sust aining Volta ge
=0)
(I
B
V
V
CE(sat)
EBO
Emitter-Base Voltage
=0)
(I
C
∗ Collec t or -Emitter
Sat uration Vol t age
V
∗ Base-Emitt er
BE(sat )
Sat uration Vol t age
h
∗ DC C ur rent Gain IC=5A VCE=5V
FE
INDUCTI VE LO AD
t
s
t
f
St orage Tim e
Fall Time
INDUCTI VE LO AD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
St orage Tim e
Fall Time
I
=10mA 9 V
E
IC=5A IB=1A
=8A IB=1.6A
I
C
=12A IB=2.4A
I
C
IC=5A IB=1A
=8A IB=1.6A
I
C
=10mA VCE=5V
I
C
10
10
1
1.5
5
1.3
1.6
40
IC=8A IB1=1.6A
V
V
=-5V RBB=0Ω
BE(off)
= 350 V L = 200 µH
CL
1.5
55
2.3
110
IC=8A IB1=1.6 A
V
V
T
=-5V RBB=0Ω
BE(off)
= 350 V L = 200 µH
CL
= 100oC
j
1.9
80
µA
µA
V
V
V
V
V
µs
ns
µs
ns
SafeOperating Area DeratingCurve
2/6
BUL89
DCCurrent Gain
CollectorEmitter SaturationVoltage
DC Current Gain
BaseEmitter SaturationVoltage
InductiveFall Time
InductiveStorageTime
3/6
BUL89
ReverseBiased SOA RBSOAand InductiveLoad SwitchingTest Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/6
TO-220 MECHANICAL DATA
BUL89
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
5/6
BUL89
Information furnished isbelieved tobe accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is atrademark of STMicroelectronics
2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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