SGS Thomson Microelectronics BUL85D Datasheet

®

MED IUM VOLTAGE FAST -SWITCHING

■

INTEGRATED ANTIPARALL EL COLLECTOR-EMITTER DIODE

■

LOW SPREAD OF DYNAMIC PARAMETERS

■

MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■

VERY HIGH SW ITCHING SPEED

■

HIGH RUGGEDNESS

BUL85D

NPN POWER TRANSISTOR

APPLICATIONS

■

110V AC ELECTRONIC TRANSFO RMERS FOR HALOGEN LAMPS UP TO 100 W

■

SWITCH MODE POWER SUPPLIES

3

2

1

TO-220

DESCRIPTION

The BUL85D is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

The BUL85D is designed for use in 110V AC electronic transformers for halogen lamps.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V V V

I

I P T

Collector-Emitter Voltage (VBE = 0) 500 V

CES

Collector-Emitter Voltage (IB = 0) 250 V

CEO

Emitter-Base Voltage

EBO

I

C

CM

I

B

BM

tot

stg

T

j

= 0, IB < 2.5 A, tp < 10µs, TJ < 150 oC)

(I

C

Collector Current 8 A Collector Peak Current (tp < 5 ms) 15 A Base Current 4 A Base Peak Current (tp < 5 ms) 8 A Total Dissipation at Tc = 25 oC80W Storage Temperature -65 to 150 Max. Operating Junction Temperature 150

V

(BR)EBO

V

o

C

o

C

January 2002

1/7

BUL85D

THERMAL DATA

R

thj-case

R

thj-amb

Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max

1.56

62.5

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

= 25 oC unless otherwise specified)

(T

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CES

I

EBO

V

(BR)EBO

Collector Cut-off Current (V

BE

= 0)

Emitter Cut-off Current (I

= 0)

C

Emitter-Base

= 500 V

V

CE

V

= 500 V Tj = 125 oC

CE

= 9 V 100 µA

V

EB

I

= 10mA 10 18 V

E

100 500

Breakdown Voltage (I

= 0)

C

V

CEO(sus)

∗ Collector-Emitter

I

= 10 mA L = 25 mH 250 V

C

Sustaining Voltage (I

= 0)

B

V

∗ Collector-Emitter

CE(sat)

Saturation Voltage

V

∗ Base-Emitter

BE(sat)

Saturation Voltage

h

∗ DC Current Gain I

FE

RESISTIVE LOAD

s

t

f

Storage Time Fall Time

t

INDUCTIVE LOAD

s

t

f

Storage Time Fall Time

t

= 2 A IB = 0.4 A

I

C

I

= 4 A IB = 0.8 A

C

I

= 8 A IB = 1.6 A

C

= 2 A IB = 0.4 A

I

C

I

= 8 A IB = 1.6 A

C

= 10 mA VCE = 5 V

C

I

= 0.5 A VCE = 5 V

C

I

= 14 A VCE = 10 V

C

I

= 4 A VCC = 150 V

C

I

= -I

B(on)

≥ 30 µs (see figure 2)

t

p

I

= 4 A V

C

I

= 0.8 A V

B

= 0 Ω tp ≥ 30µs

R

BB

B(off)

= 0.8 A

CL

BE(off)

= 200 V

= -3 V

10

4

1.2 1.8 2.4

0.1 0.3

0.6

1.2

1.1

1.5

60 10

250

0.7 50

(see figure 1)

V

∗

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Diode Forward Voltage IC = 5 A 1.5 V

f

µA µA

V V V

V V

µs ns

2/7

BUL85D

Safe Operating Area

DC Current Gain

Derating Curve

DC Current Gain

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

3/7